CEP01N6/CEB01N6 CEI01N6/CEF01N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP01N6 650V 15Ω 1A 10V CEB01N6 650V 15Ω 1A 10V CEI01N6 650V 15Ω 1A 10V CEF01N6 650V 15Ω 1A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. G D G S CEB SERIES TO-263(DD-PAK) G D S CEI SERIES TO-262(I2-PAK) G D S G D CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS Parameter S S CEF SERIES TO-220F Tc = 25 C unless otherwise noted Limit Symbol TO-220/263/262 Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Drain Current-Continuous Drain Current-Pulsed ID a IDM Maximum Power Dissipation @ TC = 25 C Units V V 1 e 4 4 e A 36 28 W 0.22 W/ C 1 f PD - Derate above 25 C TO-220F 0.29 A Single Pulsed Avalanche Energy d EAS 60 mJ Repetitive Avalanche Current IAS 0.8 A TJ,Tstg -55 to 150 C Symbol Limit Units Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case RθJC 3.5 4.5 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 65 C/W Rev 1. 2005.December http://www.cetsemi.com 1 CEP01N6/CEB01N6 CEI01N6/CEF01N6 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 650 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 600V, VGS = 0V 1 µA IGSSF VGS = 30V, VDS = 0V 10 µA IGSSR VGS = -30V, VDS = 0V -10 µA 4 V 15 Ω Off Characteristics V On Characteristics Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA RDS(on) VGS = 10V, ID = 0.4A Forwand Transconductance gFS b VDS = 20V, ID = 0.4A Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Static Drain-Source On-Resistance 2 12 Dynamic Characteristics c VDS = 25V, VGS = 0V f = 1.0MHz 0.5 S 136 pF 46 pF 19 pF Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 300V, ID = 0.4A, VGS = 10V, RGEN = 4.7Ω 19 38 ns 13 26 ns 24 48 ns Turn-On Fall Time tf 35 70 ns Total Gate Charge Qg 6 8 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 480V, ID = 0.8A, VGS = 10V 1.0 nC 4.4 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 0.8A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.L = 190mH, IAS = 0.8A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C . e.Limited only by maximum temperature allowed . f .Pulse width limited by safe operating area . 2 0.8 A 1.6 V 6 CEP01N6/CEB01N6 CEI01N6/CEF01N6 2.5 1.5 25 C 1.2 ID, Drain Current (A) ID, Drain Current (A) VGS=10,9,8V VGS=6V 0.9 0.6 0.3 2.0 1.5 1.0 0.5 VGS=5V 0.0 0.0 0 5 10 15 20 25 1 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 5 6 7 Figure 2. Transfer Characteristics Ciss 120 80 Coss 40 Crss 0 0 5 10 15 20 25 3.0 2.5 ID=0.4A VGS=10V 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage 4 Figure 1. Output Characteristics 160 ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 3 VGS, Gate-to-Source Voltage (V) 200 1.2 2 VDS, Drain-to-Source Voltage (V) 240 1.3 -55 C TJ=125 C VGS=0V 10 10 10 -25 0 25 50 75 100 125 150 0 -1 -2 0.2 0.6 1.0 1.4 1.8 2.2 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 10 VDS=480V ID=0.8A 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEP01N6/CEB01N6 CEI01N6/CEF01N6 6 4 2 0 0 1 2 3 4 5 4 RDS(ON)Limit 10 100µs 1ms 0 10ms DC 10 10 6 1 -1 TC=25 C TJ=150 C Single Pulse -2 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 0.1 10 -1 PDM 0.05 t1 t2 0.02 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 0.01 10 Single Pulse -2 10 -5 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4-5 10 0 10 1 3