CEK01N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 0.35A, RDS(ON) = 10.5 Ω @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. TO-92(Bulk) & TO-92(Ammopack) package. G G D S G TO-92(Ammopack) ABSOLUTE MAXIMUM RATINGS D S TO-92(Bulk) S TA = 25 C unless otherwise noted Symbol Limit Drain-Source Voltage VDS 650 Units V Gate-Source Voltage VGS ±30 V ID 0.35 A IDM 1.4 A PD 3.1 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJL 40 C/W Parameter Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Leadb This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2007.Feb http://www.cetsemi.com CEK01N65 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 650 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 650V, VGS = 0V 25 µA IGSSF VGS = 30V, VDS = 0V 10 uA IGSSR VGS = -30V, VDS = 0V -10 uA 4.5 V 10.5 Ω Off Characteristics V On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics VGS(th) VGS = VDS, ID = 250µA RDS(on) VGS = 10V, ID = 0.2A 8.5 gFS VDS = 10V, ID = 0.2A 1 S 210 pF 45 pF 20 pF b 2.5 c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 300V, ID = 0.35A, VGS = 10V, RGEN = 4.7Ω 14.3 28.6 ns 14.6 29.2 ns 23 46 ns Turn-Off Fall Time tf 16 32 ns Total Gate Charge Qg 5.8 7.7 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 480V,ID = 0.35A, VGS = 10V 2 nC 2.3 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 0.2A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 2 0.35 A 1.5 V 6 CEK01N65 0.6 VGS=10,8,7V 1.0 ID, Drain Current (A) ID, Drain Current (A) 1.2 VGS=6V 0.8 0.6 0.4 VGS=5V 0.2 VGS=4V 0 0.0 4 8 12 16 20 25 C 0.1 1 2 3 -55 C 4 5 6 7 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) Ciss 150 100 Coss 50 Crss 0 5 10 15 20 25 3.0 2.5 ID=0.2A VGS=10V 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ=125 C VGS, Gate-to-Source Voltage (V) IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 0.2 VDS, Drain-to-Source Voltage (V) 200 1.2 0.3 24 250 1.3 0.4 0 300 0 0.5 -25 0 25 50 75 100 125 150 VGS=0V 10 0 10 -1 10 -2 0.2 0.6 1.0 1.4 1.8 2.2 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 10 VDS=480V ID=0.35A 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEK01N65 6 4 2 0 0 1 2 3 4 5 4 RDS(ON)Limit 10 0 10ms 100ms 10 10 6 1 1s -1 DC TC=25 C TJ=150 C Single Pulse -2 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on V IN RL D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms Figure 9. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 10 0.2 -1 0.1 0.05 10 PDM 0.02 0.01 -2 t1 Single Pulse 10 -3 10 -4 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 1 10 2 3