CEM3128 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V, 9A, RDS(ON) = 16mΩ @VGS = 10V. RDS(ON) = 23mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D1 8 D1 7 D2 6 D2 5 1 S1 2 G1 3 S2 4 G2 Surface mount Package. SO-8 1 ABSOLUTE MAXIMUM RATINGS Parameter TA = 25 C unless otherwise noted Symbol Limit Drain-Source Voltage VDS 30 Units V Gate-Source Voltage VGS ±20 V ID 9 A IDM 36 A PD 2.5 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJA 62.5 C/W Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Rev 1. 2006.Sep http://www.cetsemi.com Details are subject to change without notice . 1 CEM3128 Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 30V, VGS = 0V 1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA 3 V VGS = 10V, ID =9A 1 13 16 mΩ VGS = 4.5V, ID =7.2A 18 23 mΩ Dynamic Characteristics d Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0V, f = 1.0 MHz 950 pF 165 pF 85 pF Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 15V, ID = 9A, VGS = 10V, RGEN = 0.3Ω 12 24 ns 3.5 7 ns ns 32 64 Turn-Off Fall Time tf 6.7 13.4 ns Total Gate Charge Qg 14.8 19.7 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 15V, ID = 9A, VGS = 10V 2.9 nC 1.8 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = 9A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 9 A 1.3 V 5 CEM3128 35 20 25 C 28 ID, Drain Current (A) ID, Drain Current (A) VGS=10,8,6V VGS=4V 21 14 7 16 12 8 4 TJ=125 C VGS=3V 0 0 0 1 2 3 0 4 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 5 6 Figure 2. Transfer Characteristics 840 630 420 Coss 210 Crss 0 0 5 10 15 20 25 2.2 1.9 ID=9A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage 4 Figure 1. Output Characteristics Ciss ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 2 VGS, Gate-to-Source Voltage (V) 1050 1.2 1 VDS, Drain-to-Source Voltage (V) 1260 1.3 -55 C VGS=0V 10 10 10 -25 0 25 50 75 100 125 150 1 0 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 10 VDS=20V ID=9A 6 4 2 0 0 2 4 RDS(ON)Limit 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEM3128 3 6 9 12 10 10 10 10 15 1 10ms 100ms 1s DC 0 -1 TA=25 C TJ=150 C Single Pulse -2 10 -2 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 -1 PDM 0.1 t1 0.05 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 0.02 10 Single Pulse -2 10 -4 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 1 10 2 2