CET CEM3178 Dual n-channel enhancement mode field effect transistor Datasheet

CEM3178
Dual N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 7.6A, RDS(ON) = 22mΩ @VGS = 10V.
RDS(ON) = 33mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8
1
ABSOLUTE MAXIMUM RATINGS
D1
8
D1
7
D2
6
D2
5
1
S1
2
G1
3
S2
4
G2
TA = 25 C unless otherwise noted
Symbol
Limit
Drain-Source Voltage
VDS
30
Units
V
Gate-Source Voltage
VGS
±20
V
ID
7.6
A
IDM
30
A
PD
2.0
W
62.5
C/W
Parameter
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation
Thermal Characteristics
Parameter
Symbol
Thermal Resistance, Junction-to-Ambient b
RθJA
Specification and data are subject to change without notice .
1
Rev 3. 2010.Apr
http://www.cetsemi.com
CEM3178
Electrical Characteristics
Parameter
TA = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
30
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = 30V, VGS = 0V
1
µA
IGSSF
VGS = 20V, VDS = 0V
100
nA
IGSSR
VGS = -20V, VDS = 0V
-100
nA
Off Characteristics
V
On Characteristics c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
3
V
VGS = 10V, ID = 6.3A
1
17
22
mΩ
VGS = 4.5V, ID = 5.0A
27
33
mΩ
Dynamic Characteristics d
Forward Transconductance
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 15V, ID = 6A
VDS = 15V, VGS = 0V,
f = 1.0 MHz
5
S
590
pF
125
pF
95
pF
Switching Characteristics d
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 15V, ID = 1A,
VGS = 10V, RGEN = 6Ω
10
20
ns
4
8
ns
25
50
ns
Turn-Off Fall Time
tf
4
8
ns
Total Gate Charge
Qg
13
17
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 15V, ID = 6A,
VGS = 5V
2
nC
3.5
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
IS
Drain-Source Diode Forward Voltage c
VSD
VGS = 0V, IS = 1.6A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
1.6
A
1.2
V
CEM3178
15
VGS=10,8,6,5V
VGS=4V
20
ID, Drain Current (A)
ID, Drain Current (A)
25
15
10
VGS=3V
5
0
0
1
2
3
1
-55 C
4
3
2
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
Ciss
450
300
Coss
150
Crss
0
5
10
15
20
25
2.2
1.9
ID=6.3A
VGS=10V
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
TJ=125 C
VGS, Gate-to-Source Voltage (V)
IS, Source-drain current (A)
C, Capacitance (pF)
VTH, Normalized
Gate-Source Threshold Voltage
25 C
3
VDS, Drain-to-Source Voltage (V)
600
1.2
6
0
750
1.3
9
4
900
0
12
-25
0
25
50
75
100
125
150
VGS=0V
10
1
10
0
10
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
10 V =15V
DS
ID=7A
6
4
2
0
0
10
2
10
1
10
0
10
-1
10
-2
RDS(ON)Limit
8
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
CEM3178
4
8
12
16
1ms
10ms
100ms
1s
DC
TA=25 C
TJ=150 C
Single Pulse
10
-2
10
-1
10
0
10
1
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
V IN
RL
D
td(off)
tf
90%
90%
VOUT
VGS
RGEN
toff
tr
td(on)
VOUT
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
Figure 9. Switching Test Circuit
10
0
D=0.5
0.2
10
-1
PDM
0.1
t1
0.05
0.02
10
Single Pulse
-2
10
-4
10
-3
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
10
-2
10
-1
10
0
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
10
1
10
2
2
Similar pages