CEM4308 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 5.8A, RDS(ON) = 38mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. 5 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D1 8 D1 7 D2 6 D2 5 1 S1 2 G1 3 S2 4 G2 Surface mount Package. SO-8 1 ABSOLUTE MAXIMUM RATINGS Parameter TA = 25 C unless otherwise noted Symbol Limit Drain-Source Voltage VDS 40 Units V Gate-Source Voltage VGS ±20 V ID 5.8 A IDM 23 A PD 2.5 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJA 62.5 C/W Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Rev 1. 2006.Sep http://www.cetsemi.com Details are subject to change without notice . 1 CEM4308 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 40 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 40V, VGS = 0V 1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA 3 V VGS = 10V, ID = 5.8A 1 32 38 mΩ VGS = 4.5V, ID = 5.3A 40 50 mΩ Dynamic Characteristics c Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 5V, ID = 5.8A VDS = 15V, VGS = 0V, f = 1.0 MHz 5 S 685 pF 115 pF 70 pF Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) 10 VDD = 20V, ID = 6A, VGS = 10V, RGEN = 3Ω 20 ns 4 8 ns 27 54 ns Turn-Off Fall Time tf 4 8 ns Total Gate Charge Qg 6.6 8.7 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 20V, ID = 6A, VGS = 4.5V 1.9 nC 3 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 1.9A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 2 5.8 A 1.3 V 6 CEM4308 15 20 25 C 16 ID, Drain Current (A) ID, Drain Current (A) VGS=10,8,6V VGS=4V 12 8 4 12 9 6 3 TJ=125 C VGS=3V 0 0 0 1 2 3 0 4 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 5 6 Figure 2. Transfer Characteristics 600 450 300 Coss 150 Crss 0 0 5 10 15 20 25 2.2 1.9 ID=5.8A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage 4 Figure 1. Output Characteristics Ciss ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 2 VGS, Gate-to-Source Voltage (V) 750 1.2 1 VDS, Drain-to-Source Voltage (V) 900 1.3 -55 C VGS=0V 10 10 10 -25 0 25 50 75 100 125 150 1 0 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 5 10 VDS=20V ID=5.8A 3 2 1 0 0 2 1.5 3.0 4.5 6.0 10 10 10 10 7.5 1ms 10ms 1 100ms 1s DC 0 -1 TA=25 C TJ=150 C Single Pulse -2 10 -2 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) D 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 -1 PDM 0.1 t1 0.05 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 0.02 10 Single Pulse -2 10 -4 4 RDS(ON)Limit 4 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEM4308 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 1 10 2 2