CEM6601 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -4.3A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D D D D 8 7 6 5 1 S 2 S 3 S 4 G Surface mount Package. SO-8 1 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Symbol Limit Drain-Source Voltage VDS -60 Units V Gate-Source Voltage VGS ±20 V ID -4.3 A IDM -17 A PD 2.5 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJA 50 C/W Parameter Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Rev 2. 2006.Oct http://www.cetsemi.com Details are subject to change without notice . 1 CEM6601 Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA -60 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = -60V, VGS = 0V -1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics c Gate Threshold Voltage VGS(th) Static Drain-Source RDS(on) On-Resistance Dynamic Characteristics VGS = VDS, ID = -250µA -3 V VGS = -10V, ID = -4.3A -1 70 86 mΩ VGS = -4.5V, ID = -3.4A 95 125 mΩ d Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -5V, ID = -4.3A VDS = -30V, VGS = 0V, f = 1.0 MHz 8 S 1110 pF 110 pF 65 pF Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) 13 VDD = -30V, ID = -1A, VGS = -10V, RGEN = 6Ω 26 ns 6 12 ns 67 134 ns Turn-Off Fall Time tf 18 36 ns Total Gate Charge Qg 18.8 25 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = -30V, ID = -3.5A, VGS = -10V 2.9 nC 3.7 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = -4.3A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 -4.3 A -1.2 V 5 CEM6601 10 -VGS=10,8,6,4V 12 -ID, Drain Current (A) -ID, Drain Current (A) 15 9 6 -VGS=3V 3 8 6 4 25 C 2 TJ=125 C -55 C 0 0 0 0.5 1 1.5 2 2.5 3 0 500 Coss 250 Crss 5 10 15 20 25 30 6 2.2 1.9 ID=-4.3A VGS=-10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS -IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) Ciss ID=-250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 5 Figure 2. Transfer Characteristics 750 1.2 4 Figure 1. Output Characteristics 1000 1.3 3 -VGS, Gate-to-Source Voltage (V) 1250 0 2 -VDS, Drain-to-Source Voltage (V) 1500 0 1 10 10 10 10 -25 0 25 50 75 100 125 150 2 VGS=0V 1 0 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) -VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 10 VDS=-30V ID=-3.5A 8 6 4 2 0 0 2 RDS(ON)Limit -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) CEM6601 4 8 12 16 10 10 10 10 20 1 10ms 100ms 1s DC 0 5 -1 TA=25 C TJ=150 C Single Pulse -2 10 -2 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms Figure 9. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 10 PDM 0.02 0.01 -2 t1 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 1 10 2 2