CEM7101 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V, 4A, RDS(ON) = 75mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 ABSOLUTE MAXIMUM RATINGS D1 8 D1 7 D2 6 D2 5 1 S1 2 G1 3 S2 4 G2 TA = 25 C unless otherwise noted Symbol Limit Drain-Source Voltage VDS 30 Units V Gate-Source Voltage VGS ±20 V ID 4 A IDM 16 A PD 2.0 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJA 62.5 C/W Parameter Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b 2004.November http://www.cetsemi.com 5 - 135 CEM7101 Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 30V, VGS = 0V 1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics c Gate Threshold Voltage VGS(th) Static Drain-Source RDS(on) On-Resistance Forward Transconductance Dynamic Characteristics gFS VGS = VDS, ID = 250µA 3 V VGS = 10V, ID = 1.8A 1 60 75 mΩ VGS = 4.5V, ID = 1.0A 80 100 mΩ VDS = 15V, ID = 3.5A 2 S 245 pF 140 pF 50 pF 6 ns 3 ns 35 ns d Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0V, f = 1.0 MHz Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6Ω Turn-Off Fall Time tf 15 Total Gate Charge Qg 6.4 Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 15V, ID = 3.5A, VGS = 10V ns 10 nC 1.0 nC 1.5 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = 1.7A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 5 - 136 1.7 A 1.2 V CEM7101 10 10 8 6 VGS=4V 4 2 8 ID, Drain Current (A) ID, Drain Current (A) VGS=10,8,6,5V 6 2 VGS=3V 2 4 6 8 0 10 3 4 5 6 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 2 VGS, Gate-to-Source Voltage (V) 500 400 300 Ciss 200 Coss 100 Crss 0 0 5 10 15 20 25 2.2 1.9 ID=1.8A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature IS, Source-drain current (A) VDS=VGS ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 1 VDS, Drain-to-Source Voltage (V) 600 VTH, Normalized Gate-Source Threshold Voltage -55 C TJ=125 C 0 0 1.2 5 4 0 1.3 25 C VGS=0V 10 10 10 -25 0 25 50 75 100 125 150 1 0 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 5 - 137 10 V =15V DS ID=3.5A 10 6 4 2 0 0 2 RDS(ON)Limit 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEM7101 2 4 6 10 10 10 10 8 1 10ms 100ms 1s DC 0 -1 TA=25 C TJ=150 C Single Pulse -2 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit D=0.5 10 0 0.2 PDM 0.1 10 -1 t1 0.05 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 0.02 Single Pulse 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 5 - 138 10 1 10 2 2