CET CEM8809 N-channel enhancement mode field effect transistor Datasheet

CEM8809
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 16A, RDS(ON) = 6.2mΩ @VGS = 10V.
RDS(ON) = 9 mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8
1
ABSOLUTE MAXIMUM RATINGS
D
D
D
D
8
7
6
5
1
S
2
S
3
S
4
G
TA = 25 C unless otherwise noted
Symbol
Limit
Drain-Source Voltage
VDS
30
Units
V
Gate-Source Voltage
VGS
±20
V
ID
16
A
IDM
60
A
PD
2.5
W
TJ,Tstg
-55 to 150
C
Symbol
Limit
Units
RθJA
50
C/W
Parameter
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Rev 4. 2010.Dec
http://www.cetsemi.com
Details are subject to change without notice .
1
CEM8809
Electrical Characteristics
Parameter
TA = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
30
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = 30V, VGS = 0V
1
µA
IGSSF
VGS = 20V, VDS = 0V
100
nA
IGSSR
VGS = -20V, VDS = 0V
-100
nA
Off Characteristics
V
On Characteristics c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
3
V
VGS = 10V, ID = 8A
1
4.8
6.2
mΩ
VGS = 4.5V, ID = 8A
6
9
mΩ
Dynamic Characteristics d
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 10V, VGS = 0V,
f = 1.0 MHz
2970
pF
600
pF
450
pF
Switching Characteristics d
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 15V, ID = 6.5A,
VGS = 10V, RGEN = 4.7Ω
20
40
ns
13
26
ns
ns
74
148
Turn-On Fall Time
tf
24
48
ns
Total Gate Charge
Qg
72
94
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 24V, ID = 13A,
VGS = 10V
8
nC
20
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
IS
Drain-Source Diode Forward Voltage c
VSD
VGS = 0V, IS = 2.1A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
2.1
A
1.3
V
CEM8809
10
20
8
ID, Drain Current (A)
ID, Drain Current (A)
VGS=10,8,6,5V
VGS=3V
6
4
2
16
12
8
25 C
TJ=125 C
4
-55 C
0
0
0.2
0.4
0.6
0.8
0
1
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
2400
1800
1200
Coss
600
2
4
6
8
10
2.2
1.9
5
6
ID=16A
VGS=10V
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
4
VDS, Drain-to-Source Voltage (V)
IS, Source-drain current (A)
VTH, Normalized
Gate-Source Threshold Voltage
Crss
1.2
3
Figure 2. Transfer Characteristics
Ciss
1.3
2
Figure 1. Output Characteristics
3000
0
1
VGS, Gate-to-Source Voltage (V)
3600
0
0
VDS, Drain-to-Source Voltage (V)
-25
0
25
50
75
100
125
150
VGS=0V
10
1
10
0
10
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
10 V =24V
DS
ID=13A
10
6
4
2
0
0
2
RDS(ON)Limit
8
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
CEM8809
20
40
60
80
100
10
1
10
0
10
-1
10
-2
1ms
10ms
100ms
1s
DC
TA=25 C
TJ=150 C
Single Pulse
10
-2
10
-1
10
0
10
1
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
V IN
RL
D
VGS
RGEN
toff
tr
td(on)
td(off)
tf
90%
90%
VOUT
VOUT
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
r(t),Normalized Effective
Transient Thermal Impedance
10
0
D=0.5
10
0.2
-1
0.1
0.05
10
PDM
0.02
0.01
-2
t1
Single Pulse
10
-3
10
-4
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
10
-3
10
-2
10
-1
10
0
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
10
1
10
2
2
Similar pages