CEP02N6/CEB02N6 CEI02N6/CEF02N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N6 600V 5Ω 2A 10V CEB02N6 600V 5Ω 2A 10V CEI02N6 600V 5Ω 2A 10V CEF02N6 600V 5Ω 2A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. G D G S CEB SERIES TO-263(DD-PAK) G D S CEI SERIES TO-262(I2-PAK) G D S G D CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS Parameter S S CEF SERIES TO-220F Tc = 25 C unless otherwise noted Limit Symbol TO-220/263/262 Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Drain Current-Continuous Drain Current-Pulsed ID a IDM Maximum Power Dissipation @ TC = 25 C 2 f PD - Derate above 25 C TO-220F Units V V 2 e e A A 6 6 60 29 W 0.48 0.23 W/ C Single Pulsed Avalanche Energy d EAS 125 125 mJ Repetitive Avalanche Current a IAR 2 2 A EAR 5.4 5.4 mJ Repetitive Avalanche Energy a Operating and Store Temperature Range TJ,Tstg -55 to 150 C Symbol Limit Units Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case RθJC 2.1 4.3 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 65 C/W 2002.September http://www.cetsemi.com 4-2 CEP02N6/CEB02N6 CEI02N6/CEF02N6 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 600 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 600V, VGS = 0V 25 µA IGSSF VGS = 30V, VDS = 0V 100 nA IGSSR VGS = -30V, VDS = 0V -100 nA 4 V 5.0 Ω Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics VGS(th) VGS = VDS, ID = 250µA 2 RDS(on) VGS = 10V, ID = 1A 3.8 gFS VDS = 50V, ID = 1A 1.2 S 250 pF 50 pF 30 pF c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 300V, ID = 2A, VGS = 10V, RGEN = 18Ω 18 35 ns 18 35 ns 50 90 ns Turn-Off Fall Time tf 16 40 ns Total Gate Charge Qg 20 25 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 480V, ID = 2A, VGS = 10V 2 nC 12 nC Drain-Source Diode Characteristics and Maximun Ratings IS g Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 2A h Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.L =60mH, IAS =2.0A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C . e.Limited only by maximum temperature allowed . f .Pulse width limited by safe operating area . g.Full package IS(max) = 1.5A . h.Full package VSD test condition IS = 1.5A . 4-3 2 A 1.5 V 4 CEP02N6/CEB02N6 CEI02N6/CEF02N6 3.0 2.0 ID, Drain Current (A) ID, Drain Current (A) VGS=10,9,8,7V 2.5 VGS=6V 1.5 1.0 VGS=5V 0.5 TJ=150 C 10 0 -55 C 1.VDS=40V 2.Pulse Test 25 C 0 10 0 2 4 6 8 10 2 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) Ciss 300 200 Coss Crss 0 0 5 10 15 20 25 2.2 1.9 ID=1A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS IS, Source-drain current (A) C, Capacitance (pF) 10 Figure 2. Transfer Characteristics 100 VTH, Normalized Gate-Source Threshold Voltage 8 Figure 1. Output Characteristics 400 ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 6 VGS, Gate-to-Source Voltage (V) 500 1.2 4 VDS, Drain-to-Source Voltage (V) 600 1.3 -1 12 10 10 10 -25 0 25 50 75 100 125 1 VGS=0V 0 -1 0.4 150 0.6 0.8 1.0 1.2 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 4-4 15 10 VDS=480V ID=2A 9 6 3 0 0 1 6 12 18 RDS(ON)Limit 10 10 10 24 1ms 0 10ms DC -1 TC=25 C TJ=150 C Single Pulse -2 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT RGEN toff tr td(on) VGS 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 0.1 10 -1 PDM 0.05 t1 t2 0.02 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 0.01 10 Single Pulse -2 10 -5 4 10µs 12 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEP02N6/CEB02N6 CEI02N6/CEF02N6 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4-5 10 0 10 1 3