CET CEP05N65 N-channel enhancement mode field effect transistor Datasheet

CEP05N65/CEB05N65
CEF05N65
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
VDSS
RDS(ON)
CEP05N65
650V
2.4Ω
4.5A
ID
@VGS
10V
CEB05N65
650V
2.4Ω
4.5A
10V
CEF05N65
650V
2.4Ω
4.5A d
10V
D
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
G
D
G
D
S
G
S
CEB SERIES
TO-263(DD-PAK)
G
CEP SERIES
TO-220
ABSOLUTE MAXIMUM RATINGS
Parameter
D
S
Tc = 25 C unless otherwise noted
Limit
Symbol
TO-220/263
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed
S
CEF SERIES
TO-220F
ID
IDM
a
Maximum Power Dissipation @ TC = 25 C
e
PD
- Derate above 25 C
Operating and Store Temperature Range
TJ,Tstg
TO-220F
650
Units
V
±30
V
A
4.5
4.5
d
18
18
d
84
40
W
0.32
W/ C
0.67
-55 to 150
A
C
Thermal Characteristics
Parameter
Symbol
Limit
Units
Thermal Resistance, Junction-to-Case
RθJC
1.5
3.8
C/W
Thermal Resistance, Junction-to-Ambient
RθJA
62.5
65
C/W
Rev 3. 2009.Nov
http://www.cetsemi.com
Details are subject to change without notice .
1
Electrical Characteristics
Parameter
CEP05N65/CEB05N65
CEF05N65
Tc = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
650
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = 650V, VGS = 0V
25
µA
IGSSF
VGS = 30V, VDS = 0V
100
nA
IGSSR
VGS = -30V, VDS = 0V
-100
nA
4
V
2.4
Ω
Off Characteristics
V
On Characteristics b
Gate Threshold Voltage
VGS(th)
VGS = VDS, ID = 250µA
RDS(on)
VGS = 10V, ID = 2A
Forward Transconductance
gFS
VDS = 40V, ID = 2A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Static Drain-Source
On-Resistance
2
2
Dynamic Characteristics c
VDS = 25V, VGS = 0V,
f = 1.0 MHz
4
S
590
pF
85
pF
20
pF
Switching Characteristics c
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 300V, ID = 4.5A,
VGS = 10V, RGEN = 25Ω
17
34
ns
16
32
ns
47
ns
nC
Turn-Off Fall Time
tf
17.5
94
35
Total Gate Charge
Qg
13
17
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 480V, ID = 4.5A,
VGS = 10V
ns
2
nC
5
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 2A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 1mH, IAS = 1.3A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C
2
4.5
A
1.5
V
4
CEP05N65/CEB05N65
CEF05N65
9
5
VGS=10,8,7V
ID, Drain Current (A)
ID, Drain Current (A)
6
4
3
2
VGS=5V
1
0
0.0
5
10
15
20
25
TJ=125C
1
2
-55 C
3
4
5
6
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
Ciss
600
400
Coss
200
Crss
0
5
10
15
20
25
2.2
1.9
ID=2A
VGS=10V
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
25 C
1.5
VGS, Gate-to-Source Voltage (V)
IS, Source-drain current (A)
C, Capacitance (pF)
VTH, Normalized
Gate-Source Threshold Voltage
3
VDS, Drain-to-Source Voltage (V)
800
1.2
4.5
30
1000
1.3
6
0
1200
0
7.5
-25
0
25
50
75
100
125
VGS=0V
10
1
10
0
10-1
0.4
150
0.7
1.0
1.3
1.7
2.0
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
10
10
VDS=480V
ID=4.5A
8
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
CEP05N65/CEB05N65
CEF05N65
6
4
2
0
0
3
6
9
12
4
10
1
RDS(ON)Limit
1ms
10ms
10
10
15
2
100ms
DC
0
TC=25 C
TJ=175 C
Single Pulse
-1
10
0
10
1
10
2
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
V IN
RL
D
VGS
RGEN
toff
tr
td(on)
td(off)
tf
90%
90%
VOUT
VOUT
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
r(t),Normalized Effective
Transient Thermal Impedance
10
0
D=0.5
10
0.2
0.1
-1
0.05
0.02
0.01
10
10
PDM
t1
Single Pulse
-2
-3
10
t2
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
-5
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
10
0
10
1
3
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