CEP20N06/CEB20N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 25A, RDS(ON) =55mΩ @VGS = 10V. RDS(ON) =75mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. D G G S CEB SERIES TO-263(DD-PAK) G D S ABSOLUTE MAXIMUM RATINGS Parameter CEP SERIES TO-220 Tc = 25 C unless otherwise noted Symbol Limit Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Pulsed Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range 60 Units V ±20 V ID 25 A IDM 70 83 W Drain Current-Continuous a S PD A 0.56 W/ C TJ,Tstg -55 to 175 C Symbol Limit Units Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case RθJC 1.8 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 C/W 2004.June http://www.cetsemi.com 4 - 58 CEP20N06/CEB20N06 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 60 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 55V, VGS = 0V 1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics b Gate Threshold Voltage VGS(th) Static Drain-Source RDS(on) On-Resistance Forwand Transconductance Dynamic Characteristics gFS VGS = VDS, ID = 250µA 3 V VGS = 10 V, ID = 20A 1 42 55 mΩ VGS = 4.5V, ID = 15A 55 75 mΩ VDS = 10 V, ID = 20A 9 S 890 pF 173 pF 21 pF c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 30V, ID = 1A, VGS = 10V, RGEN =6Ω 12 25 ns 7 20 ns 34 65 ns Turn-Off Fall Time tf 9 30 ns Total Gate Charge Qg 19 25 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 30V, ID = 15A, VGS = 10V 2.8 nC 3.6 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 15A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 4 - 59 25 A 1.3 V 4 CEP20N06/CEB20N06 50 VGS=10,8,6,5V 25 C VGS=3V 20 ID, Drain Current (A) ID, Drain Current (A) 25 15 10 5 0 VGS=4V 0 1 2 3 4 0 1 2 3 4 5 6 VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) -55 C VDS, Drain-to-Source Voltage (V) 1000 750 500 Coss 250 Crss 0 0 5 10 15 20 25 2.2 1.9 ID=20A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature 10 VDS=VGS IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage 10 0 Ciss ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 20 5 1250 1.2 30 TJ=125 C 1500 1.3 40 10 10 -25 0 25 50 75 100 125 150 2 VGS=0V 1 0 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 4 - 60 10 VDS=30V ID=15A 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEP20N06/CEB20N06 6 4 2 0 10 100µs 10 10 0 5 10 15 20 4 RDS(ON)Limit 2 1ms 10ms 100ms DC 1 TC=25 C TJ=175 C Single Pulse 0 10 0 10 1 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 0.1 -1 PDM t1 0.05 t2 0.02 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 0.01 Single Pulse 10 -2 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4 - 61 10 3 10 4 2