NXP CGD944C 870 mhz, 25 db gain power doubler amplifier Datasheet

CGD944C
870 MHz, 25 dB gain power doubler amplifier
Rev. 02 — 16 November 2009
Product data sheet
1. Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of
24 V (DC), employing Hetero Field Effect Transistor (HFET) GaAs dies.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
„
„
„
„
„
„
High output capability
Excellent linearity
Extremely low noise
Excellent return loss properties
Rugged construction
Gold metallization ensures excellent reliability
1.3 Applications
„ CATV systems operating in the 40 MHz to 870 MHz frequency range
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
f = 870 MHz
24
25
26
dB
-
450
-
mA
Itot
[1]
total current
Direct Current (DC)
VB = 24 V
[1]
CGD944C
NXP Semiconductors
870 MHz, 25 dB gain power doubler amplifier
2. Pinning information
Table 2.
Pinning
Pin
Description
1
input
2, 3
common
Simplified outline
Graphic symbol
5
1 3 5 7 9
1
5
+VB
7, 8
common
9
output
9
2 3 7 8
sym095
3. Ordering information
Table 3.
Ordering information
Type number
CGD944C
Package
Name
Description
Version
-
rectangular single-ended package; aluminium flange;
2 vertical mounting holes; 2 × 6-32 UNC and 2 extra
horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VB
supply voltage
Vi(RF)
RF input voltage
Conditions
Min
Max
Unit
-
30
V
single tone
-
75
dBmV
132 channels flat
-
45
dBmV
Tstg
storage temperature
−40
+100
°C
Tmb
mounting base temperature
−20
+100
°C
CGD944C_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 16 November 2009
2 of 7
CGD944C
NXP Semiconductors
870 MHz, 25 dB gain power doubler amplifier
5. Characteristics
Table 5.
Characteristics
Bandwidth to 870 MHz; VB = 24 V (DC); Tmb = 35 °C; unless otherwise specified.
Symbol Parameter
Conditions
Gp
power gain
f = 870 MHz
SLsl
slope straight line
f = 40 MHz to 870 MHz
[1]
FL
flatness of frequency response
f = 40 MHz to 870 MHz
CTB
CSO
composite triple beat
composite second-order distortion
Min
Typ
Max
Unit
24
25
26
dB
1
-
2
dB
[2]
-
0.5
-
dB
79 + 53 flat NTSC channels
[3]
-
−68
−66
dBc
98 flat PAL channels
[4]
-
−66
-
dBc
79 + 53 flat NTSC channels
[3]
-
−70
−67
dBc
98 flat PAL channels
[4]
-
−66
-
dBc
[3]
-
−66
−58
dB
Xmod
cross modulation
79 + 53 flat NTSC channels
RLin
input return loss
f = 40 MHz to 80 MHz
20
-
-
dB
f = 80 MHz to 160 MHz
19
-
-
dB
f = 160 MHz to 320 MHz
18
-
-
dB
f = 320 MHz to 640 MHz
18
-
-
dB
f = 640 MHz to 870 MHz
18
-
-
dB
f = 40 MHz to 80 MHz
20
-
-
dB
f = 80 MHz to 160 MHz
19
-
-
dB
f = 160 MHz to 320 MHz
18
-
-
dB
f = 320 MHz to 640 MHz
18
-
-
dB
f = 640 MHz to 870 MHz
18
-
-
dB
f = 50 MHz
-
3.5
5.0
dB
-
3.5
5.0
dB
-
450
-
mA
RLout
NF
output return loss
noise figure
f = 870 MHz
Itot
total current
VB = 24 V
[5]
[1]
Gp at 870 MHz minus Gp at 40 MHz.
[2]
flatness straight line (peak to valley).
[3]
79 NTSC channels (5.25 MHz to 547.25 MHz, 48 dBmV output level) + 53 NTSC channels (553.25 MHz to 997.25 MHz, 38 dBmV
output level).
[4]
Vo = 48 dBmV
[5]
Direct Current (DC)
CGD944C_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 16 November 2009
3 of 7
CGD944C
NXP Semiconductors
870 MHz, 25 dB gain power doubler amplifier
6. Package outline
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
D
E
Z
p
A2
1
2
3
5
7
8
9
A
L
F
S
W
c
e
b
w M
e1
d
U2
q2
Q
B
y M B
q1
x M B
y M B
p
U1
q
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A2
A
max. max.
mm 20.8
9.1
OUTLINE
VERSION
b
c
D
max.
d
E
max.
e
e1
F
L
min.
p
4.15
2.04
0.51
0.25 27.2
13.75 2.54 5.08 12.7 8.8
3.85
2.54
0.38
Q
max.
q
q1
JEDEC
JEITA
U1
U2
W
w
x
EUROPEAN
PROJECTION
y
Z
max.
0.1
3.8
ISSUE DATE
99-02-06
04-02-04
SOT115J
Fig 1.
S
2.4 38.1 25.4 10.2 4.2 44.75 8.2 6-32 0.25 0.7
44.25 7.8 UNC
REFERENCES
IEC
q2
Package outline SOT115J
CGD944C_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 16 November 2009
4 of 7
CGD944C
NXP Semiconductors
870 MHz, 25 dB gain power doubler amplifier
7. Abbreviations
Table 6.
Abbreviations
Acronym
Description
CATV
Community Antenna TeleVision
DC
Direct Current
GaAs
Gallium-Arsenide
NTSC
National Television Standard Committee
PAL
Phase-Alternation Line
RF
Radio Frequency
UNC
UNified Coarse thread
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
CGD944C_2
20091116
Product data sheet
-
CGD944C_1
Modifications:
CGD944C_1
•
•
Table 5 on page 3: Correction made to the unit of CTB.
Table 5 on page 3: Correction made to the unit of CSO.
20070606
Product data sheet
-
CGD944C_2
Product data sheet
-
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 16 November 2009
5 of 7
CGD944C
NXP Semiconductors
870 MHz, 25 dB gain power doubler amplifier
9. Legal information
9.1
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
9.3
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
CGD944C_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 16 November 2009
6 of 7
CGD944C
NXP Semiconductors
870 MHz, 25 dB gain power doubler amplifier
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
11
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
General description . . . . . . . . . . . . . . . . . . . . .
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . .
Quick reference data . . . . . . . . . . . . . . . . . . . .
Pinning information . . . . . . . . . . . . . . . . . . . . . .
Ordering information . . . . . . . . . . . . . . . . . . . . .
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . .
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . .
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .
Legal information. . . . . . . . . . . . . . . . . . . . . . . .
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Contact information. . . . . . . . . . . . . . . . . . . . . .
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1
1
1
1
2
2
2
3
4
5
5
6
6
6
6
6
6
7
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 16 November 2009
Document identifier: CGD944C_2
Similar pages