CHA3666 RoHS COMPLIANT 6-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description VD1 VD2 The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. RFout RFin UMS P1 Main Features P2 N2 24,0 22,0 ■ Broadband performance 6-17GHz ■ 1.8dB noise figure rd ■ 26dBm 3 order intercept point ■ 17dBm power at 1dB compression ■ 21dB gain ■ Low DC power consumption 20,0 18,0 Gain 16,0 14,0 12,0 10,0 8,0 NF 6,0 4,0 2,0 0,0 4,00 6,00 8,00 10,00 12,00 14,00 16,00 18,00 Main Characteristics Temp = +25°C, Vd1=Vd2= +4V Pads: P1, N2=GND Symbol Parameter NF Noise figure G Gain IP3 Min 19 3rd order intercept point Typ Max Unit 1.8 2 dB 21 dB 26 dBm ESD Protections: Electrostatic discharge sensitive device observe handling precautions! Ref. : DSCHA3666-8108 - 17 Apr 08 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 6-17GHz Low Noise Amplifier CHA3666 Electrical Characteristics Temp = +25°C, Pads: P1, N2 = GND (1) Symbol Fop G Parameter Operating frequency range Gain (2) Min 6 Typ Max 17 Unit GHz 19 21 dB dB ∆G Gain flatness ±0.5 NF Noise figure (2) 1.8 2 dB IS11I Input return loss (2) 2.5:1 2.7:1 dB IS22I Ouput return loss (2) 2.0:1 2.2:1 dB IP3 3rd order intercept point (2) P1dB Output power at 1dB gain comp.(2) (3) Vd Drain bias voltage Id Drain bias current 15 60 26 dBm 17 dBm 4 V 80 100 mA (1) The other pads are not connected (2) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports. (3) P1dB can be increased (+0.5dBm) when P1 & P2 are connected and N2 nonconnected. In this case Id is typically 85mA Absolute Maximum Ratings (1) Temp = +25°C Symbol Parameter Values Unit Vd Drain bias voltage 4.5 V Pin RF input power 10 dBm Top Operating temperature range (chip backside) -40 to +85 °C 175 °C -55 to +125 °C Tj Tstg Junction temperature Storage temperature range (1) Operation of this device above anyone of these paramaters may cause permanent damage. Ref. : DSCHA3666-8108 - 17 Apr 08 2/8 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 6-17GHz Low Noise Amplifier CHA3666 Typical Scattering Parameters (On wafer Sij measurements) Bias Conditions : Freq GHZ 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 7,5 8,0 8,5 9,0 9,5 10,0 10,5 11,0 11,5 12,0 12,5 13,0 13,5 14,0 14,5 15,0 15,5 16,0 16,5 17,0 17,5 18,0 18,5 19,0 19,5 20,0 dBS11 dB -0,12 -0,15 -0,21 -0,31 -0,53 -0,99 -2,07 -4,44 -8,15 -9,23 -9,21 -9,07 -8,93 -8,37 -7,99 -7,87 -7,75 -7,54 -7,50 -7,55 -7,77 -8,11 -8,53 -8,98 -9,62 -10,22 -10,60 -11,07 -11,34 -11,28 -11,14 -11,46 -10,91 -10,01 -9,02 -8,00 -7,75 -7,02 -6,59 -6,38 Vd1=Vd2= +4V Pads: P1, N2 = GND. PhS11 ° -12,41 -25,18 -38,83 -54,17 -72,61 -96,30 -129,20 179,00 104,20 35,18 -2,42 -20,75 -30,17 -38,97 -47,52 -56,29 -63,59 -71,38 -79,76 -88,86 -97,01 -105,90 -114,50 -122,60 -130,10 -135,40 -143,40 -153,70 -160,80 -175,20 164,00 146,10 125,00 100,10 72,69 45,92 21,28 0,74 -18,52 -35,21 Ref. : DSCHA3666-8108 - 17 Apr 08 dBS12 dB -58,07 -66,93 -68,19 -70,23 -66,09 -58,45 -57,93 -53,52 -48,40 -45,69 -43,80 -42,66 -40,68 -40,46 -39,16 -38,17 -38,58 -37,51 -37,26 -36,90 -36,76 -36,05 -35,65 -35,55 -35,31 -35,13 -35,13 -34,80 -34,90 -36,47 -36,88 -37,33 -38,29 -38,86 -41,04 -42,41 -45,21 -47,61 -50,99 -45,57 PhS12 ° -75,30 158,40 -42,37 132,40 -174,80 112,50 51,75 -50,92 -119,10 -159,90 169,70 145,70 125,10 107,20 88,92 75,16 62,12 42,64 36,06 26,77 12,22 -1,08 -13,41 -24,05 -35,87 -50,20 -60,43 -76,43 -81,33 -95,20 -112,40 -119,70 -129,70 -155,40 -161,40 -173,60 -161,70 -177,80 -127,80 -104,20 dBS21 dB -55,39 -59,74 -55,53 -28,46 -11,74 1,55 9,78 15,92 19,62 21,13 21,84 22,14 22,22 22,22 22,19 22,23 22,19 22,08 22,03 21,97 21,93 21,90 21,88 21,86 21,82 21,75 21,72 21,74 21,73 21,84 21,64 21,52 21,68 21,60 21,15 20,44 19,26 18,39 17,14 15,75 3/8 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 PhS21 ° 74,95 86,43 -2,66 25,79 2,26 -54,65 -105,90 -157,20 149,90 103,90 65,87 34,89 6,85 -17,33 -39,18 -59,70 -79,40 -97,96 -115,30 -132,00 -148,40 -164,10 -179,90 164,70 149,40 134,30 119,10 104,00 88,96 73,08 55,53 41,16 24,37 5,25 -14,81 -35,47 -51,39 -69,18 -86,07 -101,50 dBS22 dB -0,16 -0,19 -0,26 -0,62 -1,03 -2,92 -5,03 -7,10 -8,51 -9,15 -9,80 -10,53 -10,91 -11,49 -11,76 -12,47 -13,87 -15,57 -17,57 -20,19 -23,18 -25,38 -26,39 -24,69 -22,43 -20,23 -19,67 -19,22 -18,20 -17,69 -18,61 -17,96 -16,63 -14,95 -13,51 -12,40 -13,47 -11,57 -10,58 -9,99 PhS22 ° -11,79 -23,89 -37,09 -51,84 -68,34 -84,65 -92,78 -98,70 -98,52 -100,90 -104,20 -107,90 -113,20 -119,50 -128,70 -141,30 -154,90 -168,10 176,80 157,60 132,40 96,42 54,20 16,73 -8,28 -25,56 -36,11 -45,27 -51,93 -63,45 -77,33 -72,90 -75,48 -83,86 -102,40 -120,70 -130,90 -142,30 -160,60 -176,80 Specifications subject to change without notice 6-17GHz Low Noise Amplifier CHA3666 Typical on wafer Measured Performance Temp = +25°C Vd1=Vd2= +4V - Pads: P1, N2 = GND - Id=80mA Typical Measurements on wafer (without bonding wires at the RF ports) S parameters versus frequency 25 20 S21 15 10 Sij (dB) 5 S11 0 -5 -10 -15 S22 -20 -25 -30 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) NF versus frequency 6 5,5 5 Noise Figure (dB) 4,5 4 3,5 3 2,5 2 1,5 1 0,5 0 4 6 8 10 12 14 16 18 Frequency (GHz) Ref. : DSCHA3666-8108 - 17 Apr 08 4/8 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 6-17GHz Low Noise Amplifier CHA3666 Pout -1dB (dBm) Output power at 1dB compression gain versus frequency 20 19,5 19 18,5 18 17,5 17 16,5 16 15,5 15 14,5 14 13,5 13 12,5 12 * P1=P2=grounded ** P1=N2=grounded • • 5 6 7 8 9 10 * typical consumption : 85mA ** typical consumption : 80mA 11 12 13 14 15 16 17 18 Frequency (GHz) Ref. : DSCHA3666-8108 - 17 Apr 08 5/8 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 6-17GHz Low Noise Amplifier CHA3666 C/I3 versus output power @configuration: P1_P2 grounded 60 50 C/I3(dB) 40 30 20 10 CI3 -6GHZ CI3 -7GHZ CI3 -8GHZ CI3 -9GHZ CI3 -10GHZ CI3 -12GHZ CI3 -14GHZ CI3 -16GHZ CI3 -17GHZ CI3 -18GHZ 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 13 14 Single Output power(dBm) IP3 versus output power @configuration P1_P2 grounded 30 28 26 Output IP3 (dBm) 24 22 20 18 16 14 IP3_6GHz IP3_7GHz IP3_8GHz IP3_9GHz IP3_10GHz IP3_12GHz IP3_14GHz IP3_16GHz IP3_17GHz IP3_18GHz 12 10 1 2 3 4 5 6 7 8 9 10 11 12 Single output power (dBm) Ref. : DSCHA3666-8108 - 17 Apr 08 6/8 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 6-17GHz Low Noise Amplifier CHA3666 Chip Assembly and Mechanical Data Vd1, Vd2 DC drain supply feed 10nF 120pF 120pF P1 N2 P2 Note: Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended. Bonding pad position DC Pads size: 100/100µm, Chip thickness: 100µm Ref. : DSCHA3666-8108 - 17 Apr 08 7/8 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 6-17GHz Low Noise Amplifier CHA3666 Chip Biasing options This chip is self-biased, and flexibility is provided by the access to number of pads. The internal DC electrical schematic is given in order to use these pads in a safe way. Vd1 Vd2 1.5K 3.1K 40 0.3K 2.5 0.3K RFout RFin 90 20 90 20 8 P1 P2 N2 Two standard biasing: Low Noise and low consumption: Vd1=Vd2 = 4V and P1, N2 grounded. P2 pads non connected (NC). Idd = 80mA & Pout-1dB = 17dBm Typical. Low Noise and higher output power Vd1=Vd2 = 4V and P1, P2 grounded. N2 pads non connected (NC). Idd = 85mA & Pout-1dB = 17.5dBm Typical. Ordering Information Chip form : CHA3666-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA3666-8108 - 17 Apr 08 8/8 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice