CHA3667a RoHS COMPLIANT 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC Vd Description The CHA3667a is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a Power pHEMT process, 0.15µm gate length, via hole through the substrate. It is ESD protected on RF ports thanks to DC specific filter circuits. RFin RFout On wafer typical measurements 30 S21 25 Gain & Return Losses (dB) It is supplied in chip form. Main Features ■ Broadband performance 7-20GHz ■ Self biased ■ 23dB gain @ 2.7dB noise figure ■ 20 dBm Output power at 1dB compression ■ DC power consumption, 175mA @ 4.2V ■ Chip size : 2,45 x 1,21 x 0,1mm 20 15 10 5 0 -5 -10 S11 -15 S22 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 Frequency ( GHz) Main Characteristics Tamb = +25°C Symbol Fop Parameter Min Input frequency range Typ 7 G Small signal gain 23 NF Noise Figure 2.7 P-1dB Id Output power at 1dB gain compression 21 23 Bias current 130 175 Max Unit 20 GHz dB 3.5 dB dBm 220 mA ESD Protections : Electrostatic discharge sensitive device observe handling precautions ! Ref. : DSCHA3667a0158 - 07 Jun 10 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 24 26 7-20GHz Amplifier CHA3667a Electrical Characteristics Tamb = +25°C, Vd = +4V Symbol Fop Parameter Min Operating frequency range G Typ Max Unit 20 GHz 7 Gain NF RLin RLout IP3 P1dB (7-8GHz) 19 21 dB (8-20GHz) 21 23 dB Noise figure (7-18 GHz) 2.7 3.5 dB Input Return Loss -10 -8 dB Output Return Loss -10 -8 dB Output IP3 28 dBm (7-14GHz) 20 dBm (14-20GHz) 21 dBm Pout at 1dB gain compression: Isol Reverse isolation 45 dB Vd Drain bias voltage 4.2 V Id Drain bias current 130 175 220 mA These values are representative for on wafer measurements that are made without bonding wires at the RF ports. Absolute Maximum Ratings (1) Tamb = +25°C Symbol Parameter (1) Values Unit Vd Drain bias voltage 4.5 V Id Drain bias current 240 mA Pin RF input power (2) 3 dBm Tch Maximum chanel temperature +175 °C Ta Operating temperature range -40 to +85 °C Storage temperature range -55 to +125 °C Tstg (1) Operation of this device above anyone of these paramaters may cause permanent damage. (2) Duration<1s Ref. : DSCHA3667a0158 - 07 Jun 10 2/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 7-20GHz Amplifier CHA3667a Typical Chip on wafer Sij parameters Tamb.=+25°C, Vd1=+4.2V, Id=175mA Ref. : DSCHA3667a0158 - 07 Jun 10 3/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 7-20GHz Amplifier CHA3667a Typical Measured Performance On wafer measurement (without bonding wires at the RF ports) Tamb.=+25°C, Vd=+4.2V Id=175mA Gain & return losses versus frequency 30 S21 Gain & Return Losses (dB) 25 20 15 10 5 0 -5 -10 S11 -15 S22 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 Frequency ( GHz) Noise figure versus frequency 5 4.5 4 NF (dB) 3.5 3 2.5 2 1.5 1 0.5 0 6 8 10 12 14 16 18 20 Frequency ( GHz) Ref. : DSCHA3667a0158 - 07 Jun 10 4/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 7-20GHz Amplifier CHA3667a Pout @1dB compression (dBm) Output power @1dB compression versus frequency 26 24 22 20 18 16 14 12 10 8 6 4 2 0 6 8 10 12 14 16 18 20 Freq ( GHz) 26 24 22 20 18 16 14 12 10 8 6 4 2 0 290 270 250 230 Id (mA) Pout (dBm) & Gain (dB) Pout, Gain & Id versus Pin @ 7GHz 210 190 170 -20 -15 -10 -5 0 Pin (dB) Ref. : DSCHA3667a0158 - 07 Jun 10 5/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 7-20GHz Amplifier CHA3667a 26 24 22 20 18 16 14 12 10 8 6 4 2 0 290 270 250 230 Id (mA) Pout( dBm) & Gain (dB) Pout, Gain & Id versus Pin @ 16GHz 210 190 170 -20 -15 -10 -5 0 Pin (dB) 26 24 22 20 18 16 14 12 10 8 6 4 2 0 290 270 250 230 Id (mA) Pout( dBm) & Gain (dB) Pout, Gain & Id versus Pin @ 20GHz 210 190 170 -20 -15 -10 -5 0 Pin (dB) Ref. : DSCHA3667a0158 - 07 Jun 10 6/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 7-20GHz Amplifier CHA3667a Bonding pad position Chip Assembly and Mechanical Data DC drain supply feed 10nF 10nF 120pF 120pF Note: 25µm diameter gold wire is to be prefered. DC Pad size: 86 / 83µm RF Pad size: 105/171µm RF wire bondings should be as short as possible, lower than 0.35mm. Chip thickness: 100µm ±.10µm Ref. : DSCHA3667a0158 - 07 Jun 10 7/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 7-20GHz Amplifier CHA3667a Notes Due to ESD protection circuits on RF input and output, an external capacitance might be requested to isolate the product from external voltage that could be present on the RF accesses. Vd RFin RFout Due to BCB coating on the chip, qualification domain implies the chip must be glued. Ordering Information Chip form : CHA3667a98F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA3667a0158 - 07 Jun 10 8/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice