CHA5051 RoHS COMPLIANT 7-16GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5051 is a high gain three-stage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps to simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate. It is available in chip form Gain & Return Losses (dB) 30 Gain & Return Losses (dB) 25 Main Features ■ Broadband performance 7-16GHz ■ 25dB gain & 3dB noise figure ■ RF ports ESD protected (see page 12) ■ 25dBm output power @ 1dB compression ■ DC power consumption, 310mA @ 4.5V ■ Chip size 2.41 x 1.5 x 0.10mm 20 S21 (dB) S11 (dB) S22 (dB) 15 10 5 0 -5 -10 -15 -20 0 5 10 15 20 25 30 Freq (GHz) Typical on wafer measurement Main Characteristics Tamb.=25°C, Vd=4.5V Symbol Parameter Min Typ Max Unit Fop Operating frequency range 7 16 GHz G Small signal gain 25 dB NF Noise figure 3 dB P1dB Output power at 1dB gain compression 25 dBm Id Bias current 310 mA ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions! Ref : DSCHA50517152 - 01 Jun 07 1/14 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel.: +33 (0 ) 1 69 33 03 08 – Fax: +33 (0) 1 69 33 03 09 CHA5051 7-16GHz Medium Power Amplifier Electrical Characteristics Tamb.=25°C, Vd=4.5V Id=310mA Symbol Fop Parameter Min Operating frequency range G Typ 7 Max Unit 16 GHz Small signal gain 25 dB Pulsed output power at 1dB compression 25 dBm P03 Output power at 3dB gain compression 26 dBm NF Noise Figure 3 dB VSWRin Input VSWR 2.5:1 P1dB VSWRout Output VSWR IP3 Output IP3 2:1 from 7 to 13GHz 33 from 14 to 16GHz 29 dBm Vd DC voltage 4.5 V Id Bias current 310 mA These values are representative for on-wafer measurements that are made without bonding wires at the RF ports. Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Maximum Drain bias voltage +5 V Id Drain bias current with Vd=4.5V 390 mA Vg Gate bias voltage -2 to +0.4 V Pin Maximum input power overdrive (2) +10 dBm Tch Maximum channel temperature +175 °C Ta Operating temperature range -40 to +85 °C Storage temperature range -55 to +125 °C Tstg (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA50517152 - 01 Jun 07 2/14 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA5051 7-16GHz Medium Power Amplifier Typical Measured Performance On wafer measurement (without bonding wires at the RF ports) Tamb.=+25°C, Vd=+4.5V Id=310mA Gain & Return Losses versus frequency 30 Gain & Return Losses (dB) 25 S21 (dB) S11 (dB) S22 (dB) 20 15 10 5 0 -5 -10 -15 -20 0 5 10 15 20 25 30 Frequency (GHz) Noise figure versus frequency (dB) 10 9 8 NF (dB) NF (dB) 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) Ref: : DSCHA50517152 - 01 Jun 07 3/14 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA5051 7-16GHz Medium Power Amplifier Gain & Pout versus Pin @ 10 GHz 30 28 Gain (dB) & Pout (dBm) 26 24 22 20 18 Gain (dB) 10 GHz Pout (dBm) 10 GHz 16 14 12 10 8 6 -20 -18 -16 -14 -12 -10 -8 -6 -4 Pin (dBm) -2 0 2 4 6 Gain & Pout versus Pin@ 14 GHz 30 28 Gain (dB) & Pout (dBm) 26 24 22 20 18 Gain (dB) 14 GHz Pout (dBm) 14 GHz 16 14 12 10 8 6 -20 -18 -16 -14 Ref. : DSCHA50517152 - 01 Jun 07 -12 -10 -8 -6 -4 Pin (dBm) 4/14 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 -2 0 2 4 6 Specifications subject to change without notice 7-16GHz Medium Power Amplifier CHA5051 Typical Chip on wafer Sij parameters Tamb.=+25°C, Vd1=+4.5V, Id=310mA Freq (GHz) dB(S11) P(S11) (°) dB(S21) P(S21) (°) dB(S12) P(S12) (°) dB(S22) P(S22) (°) 1,0 -1,4 118 -57,3 -37 -55,8 -122 -1,4 117 2,0 -1,1 65 -40,7 -48 -62,5 124 -1,3 57 3,0 -0,9 19 -11,2 -137 -81,2 167 -2,3 -0 4,0 -1,1 -25 3,2 111 -58,6 -18 -3,1 -46 5,0 -3,1 -81 18,3 4 -57,6 127 -9,9 -56 6,0 -14,3 -148 25,1 -108 -63,9 -162 -10,3 -77 7,0 -16,5 -11 27,1 154 -60,3 30 -11,4 -93 8,0 -11,3 -45 27,5 72 -62,5 108 -12,1 -117 9,0 -10,5 -72 27,3 2 -60,1 -155 -13,8 -140 10,0 -10,9 -92 26,7 -60 -53,2 -84 -17,4 -161 11,0 -9,5 -113 26,5 -116 -47,5 -113 -18,6 -174 12,0 -8,3 -151 26,7 -174 -47,0 -159 -17,1 145 13,0 -8,7 160 26,1 123 -43,6 170 -14,2 86 14,0 -10,5 116 24,5 71 -37,5 149 -11,8 25 15,0 -11,4 92 24,5 20 -41,4 103 -10,9 -15 16,0 -8,5 79 25,5 -44 -39,2 79 -14,1 -55 17,0 -5,0 37 22,9 -124 -46,3 75 -13,6 -4 18,0 -4,7 4 18,4 170 -75,8 -147 -8,9 -18 19,0 -4,9 -17 13,6 112 -55,6 74 -6,1 -32 20,0 -5,1 -35 8,3 58 -52,8 29 -4,1 -49 21,0 -4,9 -50 2,6 10 -48,1 168 -2,7 -67 22,0 -4,8 -65 -3,2 -32 -47,3 150 -2,1 -85 23,0 -4,8 -80 -9,3 -72 -44,7 117 -2,4 -100 24,0 -4,9 -92 -15,4 -104 -47,0 107 -2,0 -109 25,0 -4,9 -104 -21,5 -132 -55,8 55 -2,0 -121 26,0 -4,6 -120 -26,7 -164 -50,9 170 -2,3 -134 Ref: : DSCHA50517152 - 01 Jun 07 5/14 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA5051 7-16GHz Medium Power Amplifier Typical Measured Performance in test fixture Vd1=+4.5V, Id=310mA Ref. : DSCHA50517152 - 01 Jun 07 6/14 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice 7-16GHz Medium Power Amplifier Ref: : DSCHA50517152 - 01 Jun 07 7/14 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA5051 Specifications subject to change without notice CHA5051 Ref. : DSCHA50517152 - 01 Jun 07 7-16GHz Medium Power Amplifier 8/14 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice 7-16GHz Medium Power Amplifier Ref: : DSCHA50517152 - 01 Jun 07 9/14 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA5051 Specifications subject to change without notice CHA5051 Ref. : DSCHA50517152 - 01 Jun 07 7-16GHz Medium Power Amplifier 10/14 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice 7-16GHz Medium Power Amplifier Ref: : DSCHA50517152 - 01 Jun 07 11/14 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA5051 Specifications subject to change without notice CHA5051 7-16GHz Medium Power Amplifier Associated return losses Note Due to ESD protection circuits on RF input and output, an external capacitance might be requested to isolate the product from external voltage that could be present on the RF accesses. Ref. : DSCHA50517152 - 01 Jun 07 12/14 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA5051 7-16GHz Medium Power Amplifier Chip Assembly and Mechanical Data Note : 25µm diameter gold wire is to be prefered. DC Pad size : 100/100µm . RF wire bondings should be as short as possible, lower than 0.35mm. Chip thickness : 100µm. To Vd DC Drain supply 10nF 120pF 120pF To Vg DC Gate supply 10nF Ref: : DSCHA50517152 - 01 Jun 07 13/14 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA5051 7-16GHz Medium Power Amplifier Ordering Information Chip form: CHA5051-98F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA50517152 - 01 Jun 07 14/14 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice