Chenmko CHDTA144TEPT Pnp digital silicon transistor Datasheet

CHENMKO ENTERPRISE CO.,LTD
CHDTA144TEPT
SURFACE MOUNT
PNP Digital Silicon Transistor
VOL TA GE 50 Vo l t s
CURRENT 100 m A m p er e
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
FEATURE
SC-75/SOT-416
* Small surface mounting type. (SC-75/SOT-416)
* High current gain.
* Suitable for high packing density.
Low colloector-emitter saturation.
High saturation current capability.
Internal isolated PNP transistors in one package.
Built in bias resistor(R1=47kΩ, Typ. )
(2)
0.1
0.2±0.05
(3)
1.0±0.1
(1)
*
*
*
*
0.1
0.3±0.05
CONSTRUCTION
* One PNP transistors and bias of thin-film resistors in one
package.
0.5 1.6±0.2
0.5
0.1
0.2±0.05
0.8±0.1
MARKING
TE4
0.6~0.9
0.15±0.05
0~0.1
0.1Min.
E
CIRCUIT
B
2
1.6±0.2
1
TR
R1
3
SC-75/SOT-416
Dimensions in millimeters
C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System .
SYMBOL
PARAMETER
VALUE
CONDITIONS
UNIT
VCBO
Coll ector -Base voltage
-50
V
VCEO
Collector-Emitter voltage
-50
V
VEBO
Emitter-Base voltage
-5
V
IC
Coll ector current
-100
mA
PC
Collector Power dissipation
150
mW
TSTG
Storage temperature
−55 ∼ +150
O
TJ
Junction temperature
−55 ∼ +150
O
C
140
O
C/W
RθJ-S
Thermal resistance , Note 1
Tamb ≤ 25 OC, Note 1
junction - soldering point
C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2003-12
RATING CHARACTERISTIC ( CHDTA144TEPT )
CHARA CTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SY MBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-50.0
−
−
V
-50.0
−
−
V
−
V
BVCBO
Collector-Base breakdown voltage
BVCEO
Collector-Emitter breakdown voltage IC= -1mA
BVEBO
Emitter-Base breakdown voltage
IE= -50uA
-5.0
−
IC= -50uA
TY P .
−
VCE(sat)
Collector-Emitter Saturation voltage
IC= -5mA; IB= -0.5mA
−
-0.3
V
ICBO
Collector-Base current
VCB= -50V
−
−
-0.5
uA
IEBO
Emitter-Base current
VEB= -4V
−
−
-0.5
uA
hFE
DC current gain
IC= -1mA; VCE= -5.0V
100
250
600
R1
fT
Input resistor
Transition frequency
32.9
−
47
250
61.1
−
Not e
1.Pulse test: tp≤300uS; δ ≤0.02.
IE=5mA, VCE= -10.0V
f=100MHz
=
KΩ
MHz
RATING CHARACTERISTIC CURVES ( CHDTA144TEPT )
Fig.1 DC current gain vs. collector
current
1k
VCE=-5V
DC CURRENT GAIN : hFE
500
200
100
50
Ta=100OC
25OC
-40OC
20
10
5
2
1
-100u
−1m
-5m -10m
-50m -100m
COLLECTOR CURRENT : IC (A)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Typical Electrical Characteristics
Fig.2 Collector-emitter saturation
voltage vs. collector current
-1
lC/lB=10
-500m
-200m
-100m
-50m
-20m
100OC
25OC
-40 OC
-10m
-5m
-2m
-1m
-10u
-50u -100u
-500u -1m
COLLECTOR CURRENT : IC (A)
-5m -10m
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