CHENMKO ENTERPRISE CO.,LTD CHDTA144WEPT SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 30 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SC-75/SOT-416 * Small surface mounting type. (SC-75/SOT416) * High current gain. * Suitable for high packing density. Low colloector-emitter saturation. High saturation current capability. Internal isolated PNP transistors in one package. Built in bias resistor(R1=47kΩ, Typ. ) (2) 0.1 0.2±0.05 (3) 1.0±0.1 (1) * * * * 0.1 0.3±0.05 CONSTRUCTION 0.5 1.6±0.2 0.5 0.1 0.2±0.05 0.8±0.1 * One PNP transistors and bias of thin-film resistors in one package. MARKING WE2 0.6~0.9 0.15±0.05 0~0.1 0.1Min. Gnd CIRCUIT In 2 1.6±0.2 1 R2 TR R1 SC-75/SOT-416 3 Out Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC Supply voltage − -50 V VIN Input voltage -40 +10 V − -30 − -100 − 150 mW O C IO DC Output current IC(Max.) Tamb ≤ 25 OC, Note 1 mA PTOT Total power dissipation TSTG Storage temperature −55 +150 TJ Junction temperature − 150 O C Thermal resistance − 140 O C/W RθJ-S junction - soldering point Note 1. Transistor mounted on an FR4 printed-circuit board. 2003-12 RATING CHARACTERISTIC ( CHDTA144WEPT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT − − V − -4.0 V − - 0.1 - 0.3 V VI=-5V − − -0.16 mA VI=0V; VCC=-50V − − -0.5 uA IO=-5mA; VO=-5.0V 56 − − Input resistor 32.9 47 61.1 KΩ Resistor ratio Transition frequency 0.37 − 0.47 250 0.57 − MHz VIoff) Input off voltage IO=-100uA; VCC=-5.0V VI(on) Input on voltage IO=-2mA; VO=-0.3V VO(on) Output voltage IO=-10mA; II=-0.5mA II Input current IC(off) Output current hFE DC current gain R1 R2/R1 fT Note 1.Pulse test: tp≤300uS; δ≤0.02. IE=5mA, VCE=-10.0V f=100MHz = -0.8