Chenmko CHDTB114TKPT Pnp digital silicon transistor Datasheet

CHENMKO ENTERPRISE CO.,LTD
CHDTB114TKPT
SURFACE MOUNT
PNP Digital Silicon Transistor
VOL TA GE 50 Vo l t s
CURRENT 500 m A m p er e
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
FEATURE
SC-59/SOT-346
* Small surface mounting type. (SC-70/SOT-323)
* High current gain.
* Suitable for high packing density.
*
*
*
*
Low colloector-emitter saturation.
High saturation current capability.
Internal isolated PNP transistors in one package.
Built in bias resistor(R1=10kΩ, Typ. )
(2)
0.95
(3)
1.7~2.1
2.7~3.1
0.95
(1)
CONSTRUCTION
0.3~0.51
* One PNP transistors and bias of thin-film resistors in one
package.
1.2~1.9
MARKING
TK0
0.89~1.3
0.085~0.2
E
CIRCUIT
0~0.1
0.3~0.6
B
2
1
2.1~2.95
TR
R1
3
SC-59/SOT-346
Dimensions in millimeters
C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System .
SYMBOL
PARAMETER
VALUE
CONDITIONS
UNIT
VCBO
Coll ector -Base voltage
-50
V
VCEO
Collector-Emitter voltage
-40
V
VEBO
Emitter-Base voltage
-5
V
IC
Coll ector current
-500
mA
PC
Collector Power dissipation
200
mW
TSTG
Storage temperature
−55 ∼ +150
O
TJ
Junction temperature
−55 ∼ +150
O
C
140
O
C/W
RθJ-S
Thermal resistance , Note 1
Tamb ≤ 25 OC, Note 1
junction - soldering point
C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2003-12
RATING CHARACTERISTIC ( CHDTB114TKPT )
CHARA CTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SY MBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-50.0
−
−
V
-40.0
−
−
V
−
V
BVCBO
Collector-Base breakdown voltage
BVCEO
Collector-Emitter breakdown voltage IC= -1mA
BVEBO
Emitter-Base breakdown voltage
IE= -50uA
-5.0
−
IC= -50uA
TY P .
−
VCE(sat)
Collector-Emitter Saturation voltage
IC= -50mA; IB= -2.5mA
−
-0.3
V
ICBO
Collector-Base current
VCB= -50V
−
−
-0.5
uA
IEBO
Emitter-Base current
VEB= -4V
−
−
-0.5
uA
hFE
DC current gain
IC= -50mA; VCE= -5.0V
100
250
600
R1
fT
Input resistor
Transition frequency
7
−
10
250
13
−
Not e
1.Pulse test: tp≤300uS; δ ≤0.02.
IE=5mA, VCE= -10.0V
f=100MHz
=
KΩ
MHz
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