CHENMKO ENTERPRISE CO.,LTD CHDTC124GKPT SURFACE MOUNT NPN Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SC-59/SOT-346 * Small surface mounting type. (SC-59/SOT-346) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Internal isolated NPN transistors in one package. Built in bias resistor(R1=22kΩ, Typ. ) (2) 0.95 (3) 1.7~2.1 2.7~3.1 0.95 (1) CONSTRUCTION 0.3~0.51 * One NPN transistors and bias of thin-film resistors in one package. 1.2~1.9 MARKING GKB 0.89~1.3 0.085~0.2 Emitter CIRCUIT 0~0.1 0.3~0.6 Base 2 1 2.1~2.95 R1 TR 3 SC-59/SOT-346 Dimensions in millimeters Collector LIMITING VALUES In accordance with the Absolute Maximum Rating System . SYMBOL PARAMETER VALUE CONDITIONS UNIT VCBO Coll ector -Base voltage 50 V VCEO Collector-Emitter voltage 50 V VEBO Emitter-Base voltage 5 V IC(Max.) Coll ector current 100 mA PD Power dissipation 200 mW TSTG Storage temperature −55 ∼ +150 O TJ Junction temperature −55 ∼ +150 O C 140 O C/W RθJ-S Thermal resistance , Note 1 Tamb ≤ 25 OC, Note 1 junction - soldering point C Note 1. Transistor mounted on an FR4 printed-circuit board. 2003-12 RATING CHARACTERISTIC ( CHDTC124GKPT ) CHARA CTERISTICS Tamb = 25 °C unless otherwise speciÞed. SY MBOL PARAMETER CONDITIONS BVCBO Collector-Base breakdown voltage BVCEO Collector-Emitter breakdown voltage IC=1mA BVEBO Emitter-Base breakdown voltage IE=330uA IC=50uA MIN. TY P . MAX. UNIT 50.0 − − V 50.0 − − V 5.0 − − − V VCE(sat) Collector-Emitter Saturation voltage IC=10mA; IB=0.5mA − 0.3 V ICBO Collector-Base current VCB=50V − − 0.5 uA IEBO Emitter-Base current VEB=4V 140 DC current gain IC=5mA; VCE=5.0V 56 260 − uA hFE − − R1 fT Input resistor Transition frequency 15.4 − 22 250 28.6 − KΩ MHz Not e 1.Pulse test: tp≤300uS; δ ≤0.02. IE=-5mA, VCE=10.0V f=100MHz =