CHENMKO ENTERPRISE CO.,LTD CHDTC144TMPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SOT-723 * Small surface mounting type. (SOT-723) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Internal isolated NPN transistors in one package. Built in single resistor(R1=47kΩ, Typ. ) (3) (2) 0.17~0.27 0.4 1.15~1.25 0.4 0.75~0.85 CONSTRUCTION 0.27~0.37 (1) 0.17~0.27 0.75~0.85 * One NPN transistors and bias of thin-film resistors in one package. 0.45~0.55 0.11~0.14 Emitter CIRCUIT Base 2 1.15~1.25 1 TR R1 3 Collector SOT-723 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VALUE CONDITIONS UNIT VCBO Coll ector -Base voltage 50 V VCEO Collector-Emitter voltage 50 V VEBO Emitter-Base voltage 5 V IC(Max.) Coll ector current 100 mA PD Power dissipation 150 mW TSTG Storage temperature −55 ∼ +150 O TJ Junction temperature −55 ∼ +150 O C 140 O C/W RθJ-S Thermal resistance , Note 1 Tamb ≤ 25 OC, Note 1 junction - soldering point C Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-06 RATING CHARACTERISTIC ( CHDTC144TMPT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT 50 − − V 50 − − V IE=50uA 5.0 − − V Collector cutoff current VCB=50V − − 0.5 uA Emitter cutoff current VEB=4V − − 0.5 uA VCE(sat) Collector-emitter saturation voltage IC/IB=5mA/0.5mA − − 0.3 V hFE DC current gain IC=1mA; VCE=5.0V 100 250 600 R1 fT Input resistor Transition frequency 32.9 − 47 250 61.1 − BVCBO Collector-base breakdown voltage BVCEO Collector-emitter breakdown voltage IC=1.0mA BVEBO Emitter-base breakdown voltage ICBO IEBO Note 1.Pulse test: tp≤300uS; δ≤0.02. IC=50uA IC=5mA, VCE=10.0V f=100MHz KΩ MHz RATING CHARACTERISTIC CURVES ( CHDTC144TMPT ) Typical Electrical Characteristics Fig.2 Collector-emitter voltage vs. collector current 1k VCE = 5V DC CURRENT GAIN : hFE 500 200 100 Ta=100OC 25OC -40OC 50 20 10 5 2 1 100 200 500 1m 2m 5m 10m 20m 50m100m COLLECTOR CURRENT : IC (A) COLLECsaturationTOR VOLTAGE : VCE(sat) (V) Fig.1 DC current gain vs. collector current 1 lO/lI=10 500m 200m 100m Ta=100OC 25OC -40 OC 50m 20m 10m 5m 2m 1m 100 200 500 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (uA)