Chenmko CHDTC144VKPT Npn digital silicon transistor Datasheet

CHENMKO ENTERPRISE CO.,LTD
CHDTC144VKPT
SURFACE MOUNT
NPN Digital Silicon Transistor
VOLTAGE 50 Volts
CURRENT 30 mAmpere
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
FEATURE
SC-59/SOT-346
* Small surface mounting type. (SC-59/SOT346)
* High current gain.
* Suitable for high packing density.
*
*
*
*
Low colloector-emitter saturation.
High saturation current capability.
Internal isolated NPN transistors in one package.
Built in bias resistor(R1=47kΩ, Typ. )
(2)
0.95
(3)
1.7~2.1
2.7~3.1
0.95
(1)
CONSTRUCTION
0.3~0.51
* One NPN transistors and bias of thin-film resistors in one
package.
1.2~1.9
MARKING
0.89~1.3
VKA
0.085~0.2
CIRCUIT
Gnd
In
2
1
0~0.1
0.3~0.6
2.1~2.95
R2
TR
R1
SC-59/SOT-346
3
Out
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
Supply voltage
−
50
V
VIN
Input voltage
-15
+40
V
−
30
−
100
−
200
mW
O
C
IO
DC Output current
IC(Max.)
Tamb ≤ 25 OC, Note 1
mA
PTOT
Total power dissipation
TSTG
Storage temperature
−55
+150
TJ
Junction temperature
−
150
O
C
Thermal resistance
−
140
O
C/W
RθJ-S
junction - soldering point
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004-01
RATING CHARACTERISTIC ( CHDTC144VKPT )
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VIoff)
Input off voltage
IO=100uA; VCC=5.0V
1.0
−
−
V
VI(on)
Input on voltage
IO=2mA; VO=0.3V
−
−
6.0
V
VO(on)
Output voltage
IO=10mA; II=0.5mA
−
0.1
0.3
V
II
Input current
VI=5V
−
−
0.16
mA
IC(off)
Output current
VI=0V; VCC=50V
−
−
0.5
uA
hFE
DC current gain
IO=5mA; VO=5.0V
33
−
−
R1
Input resistor
61.1
KΩ
Resistor ratio
Transition frequency
32.9
0.17
−
47
R2/R1
fT
0.21
250
0.26
−
MHz
Note
1.Pulse test: tp≤300uS; δ≤0.02.
IE=-5mA, VCE=10.0V
f=100MHz
=
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