Chenmko CHDTC614TUPT Npn digital silicon transistor Datasheet

CHENMKO ENTERPRISE CO.,LTD
CHDTC614TUPT
SURFACE MOUNT
NPN Digital Silicon Transistor
VOLTAGE 20 Volts
CURRENT 600 mAmpere
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
FEATURE
SC-70/SOT-323
* Small surface mounting type. (SC-70/SOT-323)
* In addition to the features of regular digital transistor.
VCE(sat)=40mV at IC/IB=50mA/2.5mA,makes these transistors
(2)
ideal for muting circuits.
* These transistors can be used at high current levels,IC=600mA
* Internal isolated NPN transistors in one package.
* Built in single resistor(R1=10kΩ, Typ. )
(3)
CONSTRUCTION
(1)
1.3±0.1
0.65
2.0±0.2
0.65
0.3±0.1
1.25±0.1
* One NPN transistors and bias of thin-film resistors in one
package.
MARKING
0.8~1.1
0.05~0.2
Emitter
CIRCUIT
0~0.1
0.1Min.
Base
2
2.0~2.45
1
TR
R1
3
Collector
SC-70/SOT-323
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VALUE
CONDITIONS
UNIT
VCBO
Coll ector -Base voltage
20
V
VCEO
Collector-Emitter voltage
20
V
VEBO
Emitter-Base voltage
12
V
IC(Max.)
Coll ector current
600
mA
PD
Power dissipation
200
mW
TSTG
Storage temperature
−55 ∼ +150
TJ
Junction temperature
−55 ∼ +150
Tamb ≤ 25 OC, Note 1
O
O
C
C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2005-09
RATING CHARACTERISTIC ( CHDTC614TUPT )
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
20
−
−
V
20
−
−
V
IE=50uA
12
−
−
V
Collector cutoff current
VCB=20V
−
−
0.5
uA
Emitter cutoff current
VEB=12V
−
−
0.5
uA
VCE(sat)
Collector-emitter saturation voltage
IC/IB=50mA/2.5mA
−
40
150
mV
hFE
DC current gain
IC=50mA; VCE=5.0V
820
−
2700
R1
fT
Input resistor
Transition frequency
7
10
13
KΩ
IE=-50mA, VCE=10.0V
f=100MHz
−
150
−
MHz
RON
Output "ON" resistance
VI=5V,RL=1KΩ ,f=1KHZ −
0.9
−
Ω
BVCBO
Collector-base breakdown voltage
BVCEO
Collector-emitter breakdown voltage IC=1.0mA
BVEBO
Emitter-base breakdown voltage
ICBO
IEBO
Note
1.Pulse test: tp≤300uS; δ≤0.02.
IC=50uA
RATING CHARACTERISTIC CURVES ( CHDTC614TUPT )
Typical Electrical Characteristics
Ta=100°C
Ta=25°C
Ta= −40°C
1000
100
0.1
1
10
100
1000
ON RESISTANCE : Ron (Ω)
Ta=25°C
f=1kHz
RL=1kΩ
hFE=250 (5V / 50mA)
100
10
1
1
10
1000
100
Ta=100°C
Ta=25°C
Ta= −40°C
10
1
0.1
1
10
100
1000
Fig.2 Collector-Emitter Saturation
Voltage vs. Collector Current
Fig.1 DC Current Gain vs.
Collector Current
1000
IC / IB=20
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
0.1
0.1
10000
VCE=5V
COLLECTOR SATURATION
VOLTAGE : VCE (sat) (mV)
DC CURRENT GAIN : hFE
10000
100
INPUT VOLTAGE : VI (V)
Fig.3 "ON" resistance vs. Input Voltage
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