CHE1270a RoHS COMPLIANT 12-40GHz Wide Band Detector GaAs Monolithic Microwave IC Description The CHE1270a is a detector that integrates a matched detection diode (Vdet). A reference diode is also available to be used in differential mode (Vref). RF IN Matching It is designed for a wide range of applications where an accurate transmitted power control is required, typically commercial communication systems. The circuit is manufactured with a Schottky diode MMIC process, 1µm gate length, via holes through the substrate and air bridges. Vdet Vref DC It is available in chip form. Transmitted power detection (mV) 10000 ■ Wide frequency range 12-40GHz ■ 30dB dynamic range ■ ESD protected ■ Chip size: 1.41 x 0.89 x 0.1mm ■ BCB layer protection Vdetect= Vref-Vdet (mV) Main Features 12 GHz 17GHz 22GHz 32GHz 37GHz 40GHz 27GHz 1000 100 10 1 -20 -18 -16 -14 -12 -10 -8 -6 Main Characteristics -4 -2 0 2 4 6 8 10 12 14 16 18 Input power (dBm) Tamb = +25°C, Vdc = +4.5V Symbol Parameter Min Typ 12 Max Unit 40 GHz F Frequency range Dr Dynamic range 30 dB RL Return Loss -10 dB ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions! Ref. : DSCHE1270a8205 - 25 Jun 08 1/6 United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHE1270a 12-40GHz Detector Electrical Characteristics (1) Tamb = +25°C, Vdc = +4.5V Symbol Parameter Min F Frequency range Dr Dynamic range (for Input Power detection) IPd Input Power detection Typ Max Unit 40 GHz 12 30 -15 Vdetect Voltage detection Vref – Vdet dB 15 dBm 10 to 2000 mV Return Loss (12 – 14.5GHz) -8 dB Return Loss (15 – 40GHz) -10 dB Vdc Bias voltage 4.5 V Idc Bias current 70 µA from IPd_min to IPd_max RL (1) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports but with 27kΩ resistor in parallel on pads Vdet and Vref. Absolute Maximum Ratings (1) Tamb = +25°C Symbol Vdc IPd_max Parameter Values Unit Bias voltage 6 V Maximum Input power 18 dBm Top Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +125 °C (1) Operation of this device above anyone of these paramaters may cause permanent damage. Ref. : DSCHE1270a8205 - 25 Jun 08 2/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHE1270a 12-40GHz Detector Typical on-wafer measurements results Tamb = +25°C, Vdc = +4.5V, 27k Ω resistor in parallel on pads Vdet and Vref Return Loss versus frequency 0 -2 -4 Return Loss (dB) -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 Freq (GHz) Transmitted power detection versus Input power Vdetect= Vref-Vdet (mV) 10000 12 GHz 17GHz 22GHz 32GHz 37GHz 40GHz 27GHz 1000 100 10 1 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 Input power (dBm) Ref. : DSCHE1270a8205 - 25 Jun 08 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 3/6 4 6 8 10 12 14 16 18 CHE1270a 12-40GHz Detector Transmitted power detection versus frequency @ -15dBm Input power 40 Vdetect= Vref-Vdet (mV) 35 30 25 20 15 10 5 0 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 Freq (GHz) Transmitted power detection versus frequency @ +15dBm Input power 2000 1900 Vdetect= Vref-Vdet (mV) 1800 1700 1600 1500 1400 1300 1200 1100 1000 12 14 16 18 20 22 24 26 28 Freq (GHz) Ref. : DSCHE1270a8205 - 25 Jun 08 4/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 30 32 34 36 38 40 CHE1270a 12-40GHz Detector Chip Assembly and Mechanical Data DC Pads Size: 100/100 µm, Chip thickness: 100 µm Note: Supply feed might be capacitively bypassed. 25µm diameter gold wire is to be prefered. Ref. : DSCHE1270a8205 - 25 Jun 08 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 5/6 CHE1270a 12-40GHz Detector Notes RF IN Matching 27kΩ Ω Vdet 27kΩ Ω Vref DC Recommended external resistors assembly 27kΩ resistors in parallel with Vdet and Vref pads are recommended to provide the best behaviour in the whole operating temperature range. As the voltage detection is the difference between Vref and Vdet, the external resistor value should be identical on these two ports. For information, a variation of 3% leads around 1mV variation of detected voltage. Due to ESD protection circuits on RF input, an external capacitance might be requested to isolate the product from external voltage that could be present on the RF access. ESD protections are also implemented on Vdet and Vref accesses. Due to the BCB coating on the chip, qualification domain implies the chip must be glued. Ordering Information Chip form: CHE1270a-98F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S Ref. : DSCHE1270a8205 - 25 Jun 08 6/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09