Chenmko CHEMA4PT Dual digital silicon transistor Datasheet

CHENMKO ENTERPRISE CO.,LTD
CHEMA4PT
SURFACE MOUNT
Dual Digital Silicon Transistor
VOLTAGE 50 Volts
CURRENT 100 mAmpere
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
FEATURE
* Small surface mounting type. (SOT-553)
* High current gain.
* Suitable for high packing density.
*
*
*
*
SOT553
Low colloector-emitter saturation.
High saturation current capability.
Two CHDTA114T chips in a package.
Built in bias resistor(R1=10kΩ, Typ. )
(4)
(3)
0.50
0.9~1.1
0.15~0.3
MARKING
0.50
(5)
1.5~1.7
(1)
1.1~1.3
* A4
0.5~0.6
0.19~0.18
CIRCUIT
3
2
R1
1.5~1.7
1
R1
4
5
SOT553
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VALUE
CONDITIONS
UNIT
VCBO
Coll ector -Base voltage
-50
V
VCEO
Collector-Emitter voltage
-50
V
VEBO
Emitter-Base voltage
-5
V
IC
Coll ector current
-100
mA
PC
Collector Power dissipation
150
mW
TSTG
Storage temperature
−55 ∼ +150
TJ
Junction temperature
150
Note
1. Transistor mounted on an FR4 printed-circuit board.
Tamb ≤ 25 OC, Note 1
O
O
C
C
2004-07
RATING CHARACTERISTIC ( CHEMA4PT )
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SY MBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-50.0
−
−
V
-50.0
−
−
V
−
V
BVCBO
Collector-Base breakdown voltage
BVCEO
Collector-Emitter breakdown voltage IC= -1mA
BVEBO
Emitter-Base breakdown voltage
IE= -50uA
-5.0
−
IC= -50uA
TY P .
−
VCE(sat)
Collector-Emitter Saturation voltage
IC= -10mA; IB= -1mA
−
-0.3
V
ICBO
Collector-Base current
VCB= -50V
−
−
-0.5
uA
IEBO
Emitter-Base current
VEB= -4V
−
−
-0.5
uA
hFE
DC current gain
IC= -1mA; VCE= -5.0V
100
250
600
R1
Input resistor
7
10
13
KΩ
−
250
−
MHz
fT
Transition frequency
Note
1.Pulse test: tp≤300uS; δ≤0.02.
IE=5mA, VCE= -10.0V
f=100MHz
=
RATING CHARACTERISTIC CURVES ( CHEMA4PT )
Fig.1 DC current gain vs. collector
current
1k
VCE=-5V
DC CURRENT GAIN : hFE
500
200
100
50
O
Ta=100 C
25OC
-40OC
20
10
5
2
1
-100u
−1m
-5m -10m
-50m -100m
COLLECTOR CURRENT : IC (A)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Typical Electrical Characteristics
Fig.2 Collector-emitter saturation
voltage vs. collector current
-1
lC/lB=20
-500m
-200m
-100m
-50m
-20m
100OC
25OC
-40 OC
-10m
-5m
-2m
-1m
-100u
-500u -1m
-5m -10m
COLLECTOR CURRENT : IC (A)
-50m -100m
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