Chenmko CHEMG3PT Npn digital silicon transistor Datasheet

CHENMKO ENTERPRISE CO.,LTD
CHEMG3PT
SURFACE MOUNT
NPN Digital Silicon Transistor
VOLTAGE 50 Volts
CURRENT 100 mAmpere
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
FEATURE
SOT553
* Small surface mounting type. (SOT-553)
* High current gain.
* Suitable for high packing density.
*
*
*
*
Low colloector-emitter saturation.
High saturation current capability.
Two CHDTC143T chips in one package.
Built in bias resistor(R1=4.7kΩ, Typ. )
(4)
(3)
0.50
0.9~1.1
0.50
0.15~0.3
(5)
MARKING
1.5~1.7
(1)
1.1~1.3
* G3
0.5~0.6
0.19~0.18
1.5~1.7
CIRCUIT
3
2
R1
1
R1
4
5
SOT553
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VALUE
CONDITIONS
UNIT
VCBO
Coll ector -Base voltage
50
V
VCEO
Collector-Emitter voltage
50
V
VEBO
Emitter-Base voltage
5
V
IC(Max.)
Coll ector current
100
mA
PD
Power dissipation
150
mW
TSTG
Storage temperature
−55 ∼ +150
TJ
Junction temperature
150
Note
1. Transistor mounted on an FR4 printed-circuit board.
Tamb ≤ 25 OC, Note 1
O
C
O
C
2004-07
RATING CHARACTERISTIC ( CHEMG3PT )
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SY MBOL
PARAMETER
CONDITIONS
BVCBO
Collector-Base breakdown voltage
BVCEO
Collector-Emitter breakdown voltage IC=1mA
BVEBO
Emitter-Base breakdown voltage
IE=50uA
IC=50uA
MIN.
TY P .
MAX.
UNIT
50.0
−
−
V
50.0
−
−
V
5.0
−
−
−
V
VCE(sat)
Collector-Emitter Saturation voltage
IC=5mA; IB=0.25mA
−
0.3
V
ICBO
Collector-Base current
VCB=50V
−
−
0.5
uA
IEBO
Emitter-Base current
VEB=4V
−
−
0.5
uA
hFE
DC current gain
IC=1mA; VCE=5.0V
100
250
600
R1
fT
Input resistor
Transition frequency
3.29
−
4.7
250
6.11
−
Note
1.Pulse test: tp≤300uS; δ≤0.02.
IE=-5mA, VCE=10.0V
f=100MHz
=
KΩ
MHz
RATING CHARACTERISTIC CURVES ( CHEMG3PT )
Fig.1 DC current gain vs. collector
current
1k
DC CURRENT GAIN : hFE
500
VCE=-5V
O
Ta=100 C
200
100
25OC
O
-40 C
50
20
10
5
2
1
-100
-500 −1m
-5m -10m
-50m -100m
COLLECTOR CURRENT : IC (A)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Typical Electrical Characteristics
Fig.2 Collector-emitter saturation
voltage vs. collector current
1
lC/lB=20
500m
200m
100m
50m
20m
100OC
25OC
-40 OC
10m
5m
2m
1m
100u
500u 1m
5m
10m
COLLECTOR CURRENT : IC (A)
50m 100m
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