CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 120 Volts CHM1012LPAPT CURRENT 10 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252A FEATURE * Small package. (TO-252A) .280 (7.10) .238 (6.05) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. .094 (2.40) .087 (2.20) .035 (0.89) .018 (0.45) CONSTRUCTION * N-Channel Enhancement (1) (3) (2) .035 (0.90) .025 (0.64) .417 (10.6) .346 (8.80) .261 (6.63) .213 (5.40) .220 (5.59) .195 (4.95) .102 (2.59) .078 (1.98) .024 (0.61) .016 (0.40) 1 Gate D (3) CIRCUIT 2 Source 3 Drain( Heat Sink ) (1) G Dimensions in inches and (millimeters) S (2) Absolute Maximum Ratings Symbol TO-252A TA = 25°C unless otherwise noted Parameter CHM1012LPAPT Units VDSS Drain-Source Voltage 120 V VGSS Gate-Source Voltage ±20 V Maximum Drain Current - Continuous 10 ID A - Pulsed (Note 3) PD Maximum Power Dissipation at Tc = 25 °C TJ TSTG 40 50 W Operating Temperature Range -55 to 150 °C Storage Temperature Range -55 to 150 °C 50 °C/W Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 2006-02 RATING CHARACTERISTIC CURVES ( CHM1012LPAPT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min 120 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS V 25 µA VGS = 20V,VDS = 0 V +100 nA VGS = -20V, VDS = 0 V -100 nA 1.6 3 V 100 120 mΩ (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=10A g FS Forward Transconductance VDS =10V, ID = 5A 1 3 S 9.5 SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q Gate-Drain Charge gd VDS=96V, ID=10A VGS=5V 27.5 33 nC 5 16 t on Turn-On Time V DD= 30V 42 50 tr Rise Time I D =10A , VGS = 5 V 85 130 t off Turn-Off Time RGEN= 9 Ω 60 80 tf Fall Time 45 90 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I S = 10A , VGS = 0 V 0.85 10 A 1.2 V