Chenmko CHM1012PAPT N-channel enhancement mode field effect transistor Datasheet

CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 120 Volts
CHM1012PAPT
CURRENT 10 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
TO-252A
FEATURE
* Small package. (TO-252A)
.280 (7.10)
.238 (6.05)
* Super high dense cell design for extremely low RDS(ON).
* High power and current handing capability.
.094 (2.40)
.087 (2.20)
.035 (0.89)
.018 (0.45)
CONSTRUCTION
* N-Channel Enhancement
(1)
(3) (2)
.035 (0.90)
.025 (0.64)
.417 (10.6)
.346 (8.80)
.261 (6.63)
.213 (5.40)
.220 (5.59)
.195 (4.95)
.102 (2.59)
.078 (1.98)
.024 (0.61)
.016 (0.40)
1 Gate
D (3)
CIRCUIT
2 Source
3 Drain( Heat Sink )
(1) G
Dimensions in inches and (millimeters)
S (2)
Absolute Maximum Ratings
Symbol
TO-252A
TA = 25°C unless otherwise noted
Parameter
CHM1012PAPT
Units
VDSS
Drain-Source Voltage
120
V
VGSS
Gate-Source Voltage
±20
V
Maximum Drain Current - Continuous
10
ID
A
- Pulsed
(Note 3)
PD
Maximum Power Dissipation at Tc = 25 °C
TJ
TSTG
40
50
W
Operating Temperature Range
-55 to 150
°C
Storage Temperature Range
-55 to 150
°C
50
°C/W
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
2006-02
RATING CHARACTERISTIC CURVES ( CHM1012PAPT )
Electrical Characteristics T
Symbol
A
= 25°C unless otherwise noted
Parameter
Conditions
Min
120
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = 120 V, VGS = 0 V
I GSSF
Gate-Body Leakage
I GSSR
Gate-Body Leakage
ON CHARACTERISTICS
V
25
µA
VGS = 20V,VDS = 0 V
+100
nA
VGS = -20V, VDS = 0 V
-100
nA
4
V
120
mΩ
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=10A
g FS
Forward Transconductance
VDS =10V, ID = 5A
2
100
3
S
5
SWITCHING CHARACTERISTICS (Note 4)
Qg
Total Gate Charge
Q gs
Gate-Source Charge
Q
Gate-Drain Charge
gd
VDS=96V, ID=10A
VGS=10V
47.5
57
nC
5
16
t on
Turn-On Time
V DD= 30V
40
60
tr
Rise Time
I D =10A , VGS = 10 V
85
120
t off
Turn-Off Time
RGEN= 51 Ω
56
80
tf
Fall Time
35
50
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current
V SD
Drain-Source Diode Forward Voltage I S = 10A , VGS = 0 V
0.85
10
A
1.2
V
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