CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM2307PT CURRENT 3.2 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. (2) 0.95 (3) 1.7~2.1 2.7~3.1 0.95 CONSTRUCTION (1) 0.3~0.51 * P-Channel Enhancement 1.2~1.9 0.89~1.3 0.085~0.2 3 CIRCUIT 0~0.1 0.3~0.6 D 2.1~2.95 1 G Dimensions in millimeters 2S Absolute Maximum Ratings Symbol VDSS VGSS SC-59/SOT-346 TA = 25°C unless otherwise noted Parameter CHM2307PT Units Drain-Source Voltage -30 V Gate-Source Voltage ± 20 V Maximum Drain Current - Continuous -3.2 ID A - Pulsed PD Maximum Power Dissipation TJ TSTG (Note 3) -12 1250 mW Operating Temperature Range -55 to 150 °C Storage Temperature Range -55 to 150 °C Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 100 °C/W 2008-05 RATING CHARACTERISTIC CURVES ( CHM2307PT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min -30 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA IDSS Zero Gate Voltage Drain Current VDS = -30 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS -1 µA VGS = 20V,VDS = 0 V +100 nA VGS = -20V, VDS = 0 V -100 nA -3.0 V (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance g FS V Forward Transconductance VDS = VGS, ID =-250 µA -1.0 VGS=-10V, ID=-3.2A 60 78 VGS=-4.5V, ID=-2.5A 98 120 VDS =-10V, ID = -3.2A 5 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 552 VDS = -15V, VGS = 0V, f = 1.0 MHz 91 pF 61 SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q gd Gate-Drain Charge VDS=-15V, ID=-3.2A VGS=-10V 9.5 12.5 nC 3.4 1.7 t on Turn-On Time V DD= -15V 11 22 tr Rise Time I D = -1A , VGS = -10 V 3 8 t off Turn-Off Time RGEN= 6 Ω 23 45 tf Fall Time 4 10 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I S = -0.75A , VGS = 0 V (Note 2) (Note 1) -3.2 A -1.2 V