CHENMKO ENTERPRISE CO.,LTD CHM4416JPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 9 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) 4.06 (0.160) 3.70 (0.146) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. * Lead free product is acquired. 8 1 CONSTRUCTION 5.00 (0.197) 4.69 (0.185) * N-Channel Enhancement .51 (0.020) .10 (0.012) 1.27 (0.05)BSC 4 5 1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002) CIRCUIT 8 1 D D D D S S S G 5 6.20 (0.244) 5.80 (0.228) Dimensions in millimeters 4 Absolute Maximum Ratings Symbol .25 (0.010) .17 (0.007) SO-8 TA = 25°C unless otherwise noted Parameter CHM4416JPT Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V Maximum Drain Current - Continuous 9 ID A - Pulsed PD Maximum Power Dissipation TJ TSTG (Note 3) 50 2500 mW Operating Temperature Range -55 to 150 °C Storage Temperature Range -55 to 150 °C 50 °C/W Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 2006-02 RATING CHARACTERISTIC CURVES ( CHM4416JPT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min 30 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 30 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS 1 µA VGS = 20V,VDS = 0 V +100 nA VGS = -20V, VDS = 0 V -100 nA (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance g FS V Forward Transconductance VDS = VGS, ID = 250 µA 1 3 VGS=10V, ID=9A 15 18 VGS=4.5V, ID=7.3A 23 28 VDS =15V, ID = 9A 14 V mΩ S SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q Gate-Drain Charge gd t on Turn-On Time tr Rise Time t off Turn-Off Time tf Fall Time 15 VDS=15V, ID=9A 20 nC 3 VGS=5V 7 V DD= 15V 17 25 I D = 1.0A , VGS = 10 V 17 20 RGEN= 6 Ω 48 62 12 20 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I S = 2.1A , VGS = 0 V (Note 1) (Note 2) 2.1 A 1.0 V RATING CHARACTERISTIC CURVES ( CHM4416JPT ) Typical Electrical Characteristics Figure 2. Transfer Characteristics Figure 1. Output Characteristics 25 10 V G S =1 0 V I D , DRAIN CURRENT (A) I D , DRAIN CURRENT (A) 8.0V 6.0V 5.0V 4.0V 20 15 10 VG S =3 . 0 V 5 8 TJ=25°C 6 4 TJ=125°C 2 TJ=-55°C 0 0 0 3.0 2.0 1.0 V DS , DRAIN-TO-SOURCE VOLTAGE (V) 0 5.0 6.0 VGS=10V ID=9A 1.9 R DS(on) , NORMALIZED 8 6 4 2 0 8 16 Qg , TOTAL GATE CHARGE (nC) 24 32 Figure 5. Gate Threshold Variation with Temperature VDS=VGS ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (°C) 125 150 DRAIN-SOURCE ON-RESISTANCE VGS , GATE TO SOURCE VOLTAGE (V) 4.0 2.2 0 THRESHOLD VOLTAGE 3.0 Figure 4. On-Resistance Variation with Temperature Figure 3. Gate Charge VDS=15V ID=9A Vth , NORMALIZED GATE-SOURCE 2.0 VGS , GATE-TO-SOURCE VOLTAGE (V) 10 1.3 1.0 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 TJ , JUNCTION T EMPERATURE (°C) 150 200