Chenmko CHM4450JPT N-channel enhancement mode field effect transistor Datasheet

CHENMKO ENTERPRISE CO.,LTD
CHM4450JPT
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 60 Volts
CURRENT 7.5 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
SO-8
FEATURE
* Small flat package. (SO-8 )
4.06 (0.160)
3.70 (0.146)
* Super high dense cell design for extremely low RDS(ON).
* High power and current handing capability.
* Lead free product is acquired.
8
1
CONSTRUCTION
5.00 (0.197)
4.69 (0.185)
* N-Channel Enhancement
.51 (0.020)
.10 (0.012)
1.27 (0.05)BSC
4
5
1.75 (0.069)
1.35 (0.053)
.25 (0.010)
.05 (0.002)
CIRCUIT
8
1
D D
D
D
S S
S
G
5
6.20 (0.244)
5.80 (0.228)
Dimensions in millimeters
4
Absolute Maximum Ratings
Symbol
.25 (0.010)
.17 (0.007)
SO-8
TA = 25°C unless otherwise noted
Parameter
CHM4450JPT
Units
VDSS
Drain-Source Voltage
60
V
VGSS
Gate-Source Voltage
±20
V
Maximum Drain Current - Continuous
7.5
ID
A
- Pulsed
PD
Maximum Power Dissipation
TJ
TSTG
(Note 3)
50
2500
mW
Operating Temperature Range
-55 to 150
°C
Storage Temperature Range
-55 to 150
°C
50
°C/W
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
2006-02
RATING CHARACTERISTIC CURVES ( CHM4450JPT )
Electrical Characteristics T
Symbol
A
= 25°C unless otherwise noted
Parameter
Conditions
Min
60
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
I GSSF
Gate-Body Leakage
I GSSR
Gate-Body Leakage
ON CHARACTERISTICS
1
µA
VGS = 20V,VDS = 0 V
+100
nA
VGS = -20V, VDS = 0 V
-100
nA
(Note 2)
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-Resistance
g FS
V
Forward Transconductance
VDS = VGS, ID = 250 µA
2
4
VGS=10V, ID=7.5A
20
24
VGS=6V, ID=6.5A
25
30
VDS =15V, ID = 7.5A
10
V
mΩ
S
SWITCHING CHARACTERISTICS (Note 4)
Qg
Total Gate Charge
Q gs
Gate-Source Charge
Q
Gate-Drain Charge
gd
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
25
VDS=30V, ID=7.5A
36
nC
6.5
VGS=10V
6.0
18
V DD= 30V
I D = 1.0A , VGS = 10 V
RGEN= 6 Ω
35
5
12
36
72
16
32
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current
V SD
Drain-Source Diode Forward Voltage I S = 2.1A , VGS = 0 V
(Note 1)
(Note 2)
2.1
A
1.2
V
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