Chenmko CHM4600JPT Dual enhancement mode field effect transistor Datasheet

CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
Dual Enhancement Mode Field Effect Transistor
N-channel: VOLTAGE 30 Volts
P-channel: VOLTAGE 30 Volts
CHM4600JPT
CURRENT 7.3 Ampere
CURRENT 4.6 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
SO-8
FEATURE
* Small flat package. (SO-8 )
4.06 (0.160)
3.70 (0.146)
* Super high dense cell design for extremely low RDS(ON).
* Lead free product is acquired.
* High power and current handing capability.
8
1
CONSTRUCTION
5.00 (0.197)
4.69 (0.185)
* N-Channel & P-Channel Enhancement in the package
.51 (0.020)
.10 (0.012)
1.27 (0.05)BSC
4
5
1.75 (0.069)
1.35 (0.053)
.25 (0.010)
.05 (0.002)
CIRCUIT
8
D1 D1 D2 D2
5
6.20 (0.244)
5.80 (0.228)
SO-8
Dimensions in millimeters
1
4
S1 G1 S2 G2
Absolute Maximum Ratings
Symbol
.25 (0.010)
.17 (0.007)
TA = 25°C unless otherwise noted
Parameter
N-Channel
P-Channel
Units
VDSS
Drain-Source Voltage
30
-30
V
VGSS
Gate-Source Voltage
±20
±20
V
7.3
-4.6
30
-20
Maximum Drain Current - Continuous
ID
A
- Pulsed
PD
Maximum Power Dissipation
TJ
TSTG
(Note 3)
2000
mW
Operating Temperature Range
-55 to 150
°C
Storage Temperature Range
-55 to 150
°C
62.5
°C/W
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
2006-02
RATING CHARACTERISTIC CURVES ( CHM4600JPT )
N-Channel Electrical Characteristics T
Symbol
Parameter
A
= 25°C unless otherwise noted
Conditions
Min
30
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = 30 V, VGS = 0 V
I GSSF
Gate-Body Leakage
I GSSR
Gate-Body Leakage
ON CHARACTERISTICS
1
µA
VGS = 20V,VDS = 0 V
+100
nA
VGS = -20V, VDS = 0 V
-100
nA
3
V
(Note 2)
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-Resistance
g FS
V
Forward Transconductance
VDS = VGS, ID = 250 µA
1
VGS=10V, ID=7.3A
18
22
VGS=4.5V, ID=6.3A
26
32
VDS =15V, ID = 7.3A
10
mΩ
S
SWITCHING CHARACTERISTICS (Note 4)
Qg
Total Gate Charge
Q gs
Gate-Source Charge
Q
Gate-Drain Charge
gd
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
VDS=15V, ID=7.3A
VGS=10V
21
28
nC
2.6
4.4
V DD= 15V
22
45
I D = 1.0A , VGS = 10 V
34
70
RGEN= 6 Ω
43
90
18
35
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current
V SD
Drain-Source Diode Forward Voltage I S = 2.3A , VGS = 0 V (Note 2)
(Note 1)
2.3
A
1.3
V
RATING CHARACTERISTIC CURVES ( CHM4600JPT )
P-Channel Electrical Characteristics T
Symbol
Parameter
A
= 25°C unless otherwise noted
Conditions
Min
-30
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = -30 V, VGS = 0 V
I GSSF
Gate-Body Leakage
I GSSR
Gate-Body Leakage
ON CHARACTERISTICS
-1
µA
VGS = 20V,VDS = 0 V
+100
nA
VGS = -20V, VDS = 0 V
-100
nA
-3
V
(Note 2)
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-Resistance
g FS
V
Forward Transconductance
VDS = VGS, ID = -250 µA
-1
VGS=-10V, ID=-4.6A
46
55
VGS=-4.5V, ID=-4A
72
90
VDS = -15V, ID = -4.6A
6.5
mΩ
S
SWITCHING CHARACTERISTICS (Note 4)
Qg
Total Gate Charge
Q gs
Gate-Source Charge
Q
Gate-Drain Charge
gd
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
VDS=-15V, ID=-4.6A
VGS=-10V
23
29
nC
2
6
V DD= -15V
19
I D = -1.0A , VGS = -10 V
10
30
RGEN= 6 Ω
74
135
36
75
48
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current
V SD
Drain-Source Diode Forward Voltage I S = -2.3A , VGS = 0 V (Note 2)
(Note 1)
-2.3
A
-1.3
V
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