Chenmko CHM4946JPT Dual n-channel enhancement mode field effect transistor Datasheet

CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
Dual N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 60 Volts
CHM4946JPT
CURRENT 4.5 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
SO-8
FEATURE
* Small flat package. (SO-8 )
4.06 (0.160)
3.70 (0.146)
* High density cell design for extremely low RDS(ON).
* Rugged and reliable.
* High saturation current capability.
8
1
CONSTRUCTION
5.00 (0.197)
4.69 (0.185)
* N-Channel Enhancement
.51 (0.020)
.10 (0.012)
1.27 (0.05)BSC
4
5
1.75 (0.069)
1.35 (0.053)
.25 (0.010)
.05 (0.002)
CIRCUIT
8
D1 D1 D2 D2
5
6.20 (0.244)
5.80 (0.228)
Dimensions in millimeters
1
4
S1 G1 S2 G2
Absolute Maximum Ratings
Symbol
.25 (0.010)
.17 (0.007)
SO-8
TA = 25°C unless otherwise noted
Parameter
CHM4946JPT
Units
VDSS
Drain-Source Voltage
60
V
VGSS
Gate-Source Voltage
±20
V
Maximum Drain Current - Continuous
4.5
ID
A
- Pulsed
PD
Maximum Power Dissipation
TJ
TSTG
(Note 3)
20
2000
mW
Operating Temperature Range
-55 to 150
°C
Storage Temperature Range
-55 to 150
°C
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
62.5
°C/W
2008-01
RATING CHARACTERISTIC ( CHM4946JPT )
Electrical Characteristics T
Symbol
A
= 25°C unless otherwise noted
Parameter
Conditions
Min
60
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
I GSSF
Gate-Body Leakage
I GSSR
Gate-Body Leakage
ON CHARACTERISTICS
2
µA
VGS = 20V,VDS = 0 V
+100
nA
VGS = -20V, VDS = 0 V
-100
nA
(Note 2)
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-Resistance
g FS
V
Forward Transconductance
VDS = VGS, ID = 250 µA
3
1
VGS=10V, ID=4.5A
45
55
VGS=4.5V, ID=3.9A
55
75
VDS =10V, ID = 4.5A
8
V
mΩ
S
Dynamic Characteristics
Ciss
Coss
Crss
890
Input Capacitance
Output Capacitance
VDS = 25V, VGS = 0V,
f = 1.0 MHz
173
pF
22
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Qg
Total Gate Charge
Q gs
Gate-Source Charge
Q
Gate-Drain Charge
gd
19
VDS=30V, ID=4.5A
24
nC
2.8
VGS=10V
3.6
t on
Turn-On Time
V DD= 30V
11
25
tr
Rise Time
I D = 1.0A , VGS = 10 V
8
18
t off
Turn-Off Time
RGEN= 6 Ω
34
65
tf
Fall Time
9
22
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current
V SD
Drain-Source Diode Forward Voltage I S = 2.0A , VGS = 0 V
(Note 1)
(Note 2)
2.0
A
1.2
V
RATING CHARACTERISTIC CURVES ( CHM4946JPT )
Typical Electrical Characteristics
Figure 2. Transfer Characteristics
Figure 1. Output Characteristics
20
20
V G S =1 0 , 6 , 5 , 4 . 5 V
16
16
I D , DRAIN CURRENT (A)
I D , DRAIN CURRENT (A)
VG S =4 . 0 V
12
8
VG S =3 . 5 V
4
12
8
TJ=125°C
TJ=-55°C
4
TJ=25°C
0
0
1.0
2.0
3.0
4.0
V DS , DRAIN-TO-SOURCE VOLTAGE (V)
0
5.0
Figure 3. Gate Charge
10
2.2
R DS(on) , NORMALIZED
6
4
2
0
5
10
Qg , TOTAL GATE CHARGE (nC)
15
20
Figure 5. Gate Threshold Variation with
Temperature
VDS=VGS
ID=250uA
1.2
THRESHOLD VOLTAGE
Figure 4. On-Resistance Variation with
Temperature
VGS=10V
ID=4.5A
0
Vth , NORMALIZED GATE-SOURCE
5.0
1.9
8
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
TJ , JUNCTION T EMPERATURE (°C)
125
150
DRAIN-SOURCE ON-RESISTANCE
VGS , GATE TO SOURCE VOLTAGE (V)
VDS=30V
ID=4.5A
1.3
3.0
4.0
2.0
1.0
VGS , GATE-TO-SOURCE VOLTAGE (V)
0
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
TJ , JUNCTION T EMPERATURE (°C)
150
200
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