Chenmko CHM75A3PAPT N-channel enhancement mode field effect transistor Datasheet

CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 25 Volts
CHM75A3PAPT
CURRENT 60 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
TO-252A
FEATURE
* Small package. (TO-252A)
.280 (7.10)
.238 (6.05)
* Super high dense cell design for extremely low RDS(ON).
* High power and current handing capability.
.094 (2.40)
.087 (2.20)
.035 (0.89)
.018 (0.45)
CONSTRUCTION
* N-Channel Enhancement
(1)
(3) (2)
.035 (0.90)
.025 (0.64)
.417 (10.6)
.346 (8.80)
.261 (6.63)
.213 (5.40)
.220 (5.59)
.195 (4.95)
.102 (2.59)
.078 (1.98)
.024 (0.61)
.016 (0.40)
1 Gate
D (3)
CIRCUIT
2 Source
3 Drain( Heat Sink )
(1) G
Dimensions in inches and (millimeters)
S (2)
Absolute Maximum Ratings
Symbol
VDSS
VGSS
TO-252A
TA = 25°C unless otherwise noted
Parameter
CHM75A3PAPT
Units
Drain-Source Voltage
25
V
Gate-Source Voltage
±20
V
Maximum Drain Current - Continuous
60
ID
A
- Pulsed
(Note 3)
PD
Maximum Power Dissipation at Tc = 25 °C
TJ
TSTG
200
56
W
Operating Temperature Range
-55 to 150
°C
Storage Temperature Range
-55 to 150
°C
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
50
°C/W
2007-06
ELECTRICAL CHARACTERISTIC ( CHM75A3PAPT )
Electrical Characteristics T
Symbol
A
= 25°C unless otherwise noted
Parameter
Conditions
Min
25
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = 25 V, VGS = 0 V
I GSSF
Gate-Body Leakage
I GSSR
Gate-Body Leakage
ON CHARACTERISTICS
1
µA
VGS = 20V,VDS = 0 V
+100
nA
VGS = -20V, VDS = 0 V
-100
nA
(Note 2)
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-Resistance
g FS
V
Forward Transconductance
VDS = VGS, ID = 250 µA
1
3
VGS=10V, ID=30A
7
9
VGS=4.5V, ID=30A
10
13
VDS =10V, ID = 15A
12
V
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
1180
VDS = 15V, VGS = 0V,
f = 1.0 MHz
270
pF
145
SWITCHING CHARACTERISTICS (Note 4)
Qg
Total Gate Charge
Q gs
Gate-Source Charge
Q gd
Gate-Drain Charge
VDS=15V, ID=20A
VGS=5V
10
13
nC
3.6
2.9
t on
Turn-On Time
V DD= 15V
12
25
tr
Rise Time
I D =1A , VGS = 10 V
4
10
t off
Turn-Off Time
RGEN= 6 Ω
32
65
tf
Fall Time
6
15
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current
V SD
Drain-Source Diode Forward Voltage I S = 20A , VGS = 0 V
0.85
50
A
1.2
V
RATING CHARACTERISTIC CURVES ( CHM75A3PAPT )
Typical Electrical Characteristics
Figure 2. Transfer Characteristics
Figure 1. Output Characteristics
100
100
V G S =1 0 , 8 , 6 , 4 V
80
I D , DRAIN CURRENT (A)
I D , DRAIN CURRENT (A)
80
60
40
VG S =3 . 0 V
20
60
40
TJ=125°C
TJ=25°C
20
TJ=-55°C
0
0
3.0
2.0
1.0
V DS , DRAIN-TO-SOURCE VOLTAGE (V)
0
4.0
1.0
0
VGS=10V
ID=30A
1.9
R DS(on) , NORMALIZED
8
6
4
2
0
0
4
8
12
Qg , TOTAL GATE CHARGE (nC)
16
20
Figure 5. Gate Threshold Variation with
Temperature
VDS=VGS
ID=250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
TJ , JUNCTION T EMPERATURE (°C)
125
150
DRAIN-SOURCE ON-RESISTANCE
VGS , GATE TO SOURCE VOLTAGE (V)
5.0
Figure 4. On-Resistance Variation with
Temperature
VDS=15V
ID=20A
THRESHOLD VOLTAGE
4.0
2.2
10
Vth , NORMALIZED GATE-SOURCE
3.0
VGS , GATE-TO-SOURCE VOLTAGE (V)
Figure 3. Gate Charge
1.3
2.0
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
TJ , JUNCTION T EMPERATURE (°C)
150
200
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