CHENMKO ENTERPRISE CO.,LTD CHM8809JPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 15.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) 4.06 (0.160) 3.70 (0.146) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. 8 1 CONSTRUCTION 5.00 (0.197) 4.69 (0.185) * N-Channel Enhancement .51 (0.020) .10 (0.012) 1.27 (0.05)BSC 4 5 1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002) CIRCUIT 8 1 D D D D S S S G 5 6.20 (0.244) 5.80 (0.228) Dimensions in millimeters 4 Absolute Maximum Ratings Symbol .25 (0.010) .17 (0.007) SO-8 TA = 25°C unless otherwise noted Parameter CHM8809JPT Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±16 V Maximum Drain Current - Continuous 15.5 ID A - Pulsed PD Maximum Power Dissipation TJ TSTG (Note 3) 50 2500 mW Operating Temperature Range -55 to 150 °C Storage Temperature Range -55 to 150 °C 50 °C/W Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 2006-01 RATING CHARACTERISTIC CURVES ( CHM8809JPT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min 30 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS 1 µA VGS = 16V,VDS = 0 V +100 nA VGS = -16V, VDS = 0 V -100 nA (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance g FS V Forward Transconductance VDS = VGS, ID = 250 µA 1 3 VGS=10V, ID=15.5A 5.5 6.6 VGS=4.5V, ID=15A 7.5 9.5 VDS =5V, ID = 16A 34 V mΩ S SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q Gate-Drain Charge gd t on Turn-On Time tr Rise Time t off Turn-Off Time tf Fall Time 46 VDS=15V, ID=16A 55 nC 15 VGS=5V 15 V DD= 15V 24 I D = 1.0A , VGS = 10 V 14 28 100 200 40 80 RGEN= 6 Ω 48 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I S = 2.1A , VGS = 0 V (Note 1) (Note 2) 2.1 A 1.3 V RATING CHARACTERISTIC CURVES ( CHM8809JPT ) Typical Electrical Characteristics Figure 2. Transfer Characteristics Figure 1. Output Characteristics 40 50 10V 6.0V 5.0V 4.0V 30 40 I D , DRAIN CURRENT (A) I D , DRAIN CURRENT (A) V G S =8 . 0 V VG S =3 . 0 V 20 10 TJ=-55°C 30 20 TJ=125°C 10 TJ=25°C 0 1.5 1.0 0.5 V DS , DRAIN-TO-SOURCE VOLTAGE (V) 0 0 2.0 1.0 VGS Figure 3. Gate Charge 2.2 R DS(on) , NORMALIZED 4 2 0 0 15 30 45 Qg , TOTAL GATE CHARGE (nC) 60 75 Figure 5. Gate Threshold Variation with Temperature VDS=VGS ID=250uA THRESHOLD VOLTAGE 1.2 Vth , NORMALIZED GATE-SOURCE Figure 4. On-Resistance Variation with Temperature 1.9 6 1.3 4.0 VGS=10V ID=16A VDS=15V ID=16A 8 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (°C) 125 150 DRAIN-SOURCE ON-RESISTANCE VGS , GATE TO SOURCE VOLTAGE (V) 10 3.0 2.0 , GATE-TO-SOURCE VOLTAGE (V) 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 TJ , JUNCTION T EMPERATURE (°C) 150 200