CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CHM9433JPT CURRENT 5.4 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) 4.06 (0.160) 3.70 (0.146) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. * Lead free product is acquired. 8 1 CONSTRUCTION 5.00 (0.197) 4.69 (0.185) * P-Channel Enhancement .51 (0.020) .10 (0.012) 1.27 (0.05)BSC 4 5 1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002) CIRCUIT 8 1 D D D D S S S G 5 6.20 (0.244) 5.80 (0.228) Dimensions in millimeters 4 Absolute Maximum Ratings Symbol .25 (0.010) .17 (0.007) SO-8 TA = 25°C unless otherwise noted Parameter CHM9433JPT Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±12 V Maximum Drain Current - Continuous -5.4 ID A - Pulsed PD Maximum Power Dissipation TJ TSTG (Note 3) -20 2500 mW Operating Temperature Range -55 to 150 °C Storage Temperature Range -55 to 150 °C 50 °C/W Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 2006-02 RATING CHARACTERISTIC CURVES ( CHM9433JPT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min -20 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS -1 µA VGS = 12V,VDS = 0 V +100 nA VGS = -12V, VDS = 0 V -100 nA (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance g FS V Forward Transconductance VDS = VGS, ID = -250 µA -0.6 V VGS=-4.5V, ID=-5.2A 50 65 VGS=-2.5V, ID=-4.5A 80 100 VDS = -9V, ID = -5.1A 15 mΩ S SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q Gate-Drain Charge gd t on Turn-On Time tr Rise Time t off Turn-Off Time tf Fall Time VDS=-6V, ID=-5.1A VGS=-4.5V 19.4 25 3 nC 5 V DD= -6V 20 I D = -1.0A , VGS = -4.5 V 21 30 RGEN= 6 Ω 76 106 56 78 28 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I S = -2.6A , VGS = 0 V (Note 2) (Note 1) -2.6 A -1.2 V