Chenmko CHUMF24PT Power management (dual transistor) Datasheet

CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
Power Management (Dual Transistor)
CHUMF24PT
Tr1:VOLTAGE 50 Volts CURRENT 150 mAmpere
DTr2:VOLTAGE 50 Volts CURRENT 50 mAmpere
APPLICATION
* Power management circuit
FEATURE
* Small surface mounting type. (SC-88/SOT-363)
* Power switching circuit in a single package.
* Mounting cost and area can be cut in half.
* Both the 2SC4617 & CHDTC114E in one package.
* Built in bias resistor(R1=10kΩ, Typ. )
SC-88/SOT-363
(1)
(6)
0.65
1.2~1.4
2.0~2.2
0.65
(4)
0.15~0.35 (3)
1.15~1.35
0.8~1.1
0.08~0.15
0~0.1
0.1 Min.
CIRCUIT
6
4
R1
Tr1
2.15~2.45
R2
DTr2
1
3
SC-88/SOT-363
Dimensions in millimeters
2SC4617 LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
Collector-base voltage
−
60
V
VCEO
Collector-emitter voltage
−
50
V
VEBO
Emitter-base voltage
−
7
V
DC Output current
−
150
mA
−
150
mW
+150
IC
NOTE.1
PC
Total power dissipation
TSTG
Storage temperature
−55
TJ
Junction temperature
−
Note
1. 120mW per element must not be exceeded.
150
O
C
O
C
CHDTC114E LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
Supply voltage
−
50
V
VIN
Input voltage
-10
+40
V
−
50
NOTE.1
−
100
NOTE.2
−
150
mW
IO
DC Output current
IC(Max.)
mA
PC
Power dissipation
TSTG
Storage temperature
−55
+150
O
C
TJ
Junction temperature
−
150
O
C
Note
1. Characteristics of built-in transistor.
2. Each terminal mounter on a recommended land.
2SC4617 CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BVCEO Collector-emitter breakdown voltage
IC=50uA
60
−
−
V
BVCBO Collector-base breakdown voltage
IC=1mA
50
−
−
V
Emitter-base breakdown voltage
IE=50uA
7
−
ICBO
Collector cut-off current
VCB=60V
−
−
−
IEBO
Emitter cut-off current
DC current gain
VEB=7V
−
VCE=6V,IC=1mA
180
Collector-emitter saturation voltage
IC=50mA,IB=5mA
VCB=12V,IE=0mA,f=1MHZ
−
−
VCE=12V,IE=-2mA,f=100MHZ
−
BVEBO
hFE
VCE(sat)
Cob
Collector output capacitance
fT
Transition frequency
V
100
nA
−
100
nA
−
390
−
−
0.4
V
2
3.5
180
−
pF
MHz
Note
1.Pulse test: tp≤300uS; δ≤0.02.
CHDTC114E CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VIoff)
Input off voltage
IO=100uA; VCC=5.0V
0.5
−
−
V
VI(on)
Input on voltage
IO=10mA; VO=0.3V
−
−
3.0
V
V
VO(on)
Output voltage
IO=10mA; II=0.5mA
−
0.1
0.3
II
Input current
VI=5V
−
−
0.88
mA
IC(off)
Output current
VI=0V; VCC=50V
−
−
0.5
uA
G1
DC current gain
IO=5mA; VO=5.0V
30
−
R1
Input resistor
R2/R1
fT
Resistor ratio
Transition frequency
Note
Pulse test: tp≤300uS; δ≤0.02.
IE=-5mA, VCE=10.0V
f=100MHz
=
−
−
7
10
13
KΩ
0.8
−
1.0
250
1.2
−
−
MHz
RATING CHARACTERISTIC CURVES ( CHUMF24PT )
2SC4617 Typical Electrical Characteristics
Ta=100OC
10
5
2
1
0.5
Grounded emitter output
characteristics (1)
Ta=25°C
0.50mA
80
Fig.3
mA
0.45 A
0.40m
0.35mA
0.30mA
0.25mA
60
0.20mA
0.15mA
40
0.10mA
20
0.05mA
10
Grounded emitter output
characteristics (2)
30µA
Ta=25°C
27µA
8
24µA
21µA
6
18µA
15µA
12µA
4
9µA
6µA
2
3µA
0.2
IB=0A
0
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0
0.4
0.8
1.2
1.6
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
Fig.4 Collector-emitter saturation voltage
vs. collector current
Fig.5 DC current gain vs.
collector current
0.5
IC/IB=10
0.2
0.1
Ta=100°C
25°C
−55°C
0.05
IC/IB=50
Ta=100°C
25°C
−55°C
0.1
0.02
0.01
0.01
0.5 1
2
5
10
20
50 100 200
COLLECTOR CURRENT : IC(mA)
0.2
0.5 1
2
5
10
20
COLLECTOR CURRENT : IC(mA)
8
16
20
Fig. 6 Gain bandwidth product
vs. emitter current
0.05
0.02
0.2
0.2
4
IB=0A
12
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
TRANSITION FREQUENCY : fT(MHz)
0.5
0
0
2.0
BASE TO EMITTER VOLTAGE : VBE(V)
DC CURRENT GAIN : hFE
COLLECTOR SATURATION VOLTAGE : VCE(sat)(V)
55OC
25OC
100
COLLECTOR CURRENT : IC(mA)
VCE=6V
25°C
−55°C
COLLECTOR CURRENT : IC(mA)
50
20
Fig.2
Grounded emitter propagation
characteristics
COLLECTOR CURRENT : IC(mA)
Fig.1
50 100
500
Ta=25°C
VCE=6V
200
100
50
−0.5 −1
−2
−5
−10 −20
EMITTER CURRENT : IE(mA)
−50 −100
RATING CHARACTERISTIC CURVES ( CHUMF24PT )
CHDTC114E Typical Electrical Characteristics
Fig.1 Input voltage vs. output current
(ON characteristics)
100
Fig.2 Output current vs. input voltage
(OFF characteristics)
10m
5m
VO=0.3V
OUTPUT CURRENT : Io (A)
INPUT VOLTAGE : VI(on) (V)
50
20
10
Ta =- 40OC
O
25
= C
100OC
5
2
1
500m
200m
100m
100
200
500 1m
2m
2m
1m
500
VCC=5V
Ta=100OC
25OC
-40 OC
200
100
50
20
10
5
2
1
5m 10m 20m 50m 100m
0
0.5
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
1k
2.5
3.0
lO/lI=20
500m
Ta=100 C
25OC
-40OC
100
50
20
10
5
2
OUTPUT VOLTAGE : VO(on) (V)
DC CURRENT GAIN : GI
2.0
1
VO =5V
O
1
100 200
1.5
Fig.4 Output voltage vs. output
current
500
200
1.0
INPUT VOLTAGE : VI(off) (V)
Ta=100OC
25OC
-40 OC
200m
100m
50m
20m
10m
5m
2m
500 1m 2m
5m 10m 20m 50m100m
OUTPUT CURRENT : IO (A)
1m
100
200
500 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
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