MITSUBISHI IGBT MODULES CM200RX-12A HIGH POWER SWITCHING USE CM200RX-12A ¡IC ................................................................... 200A ¡VCES ............................................................ 600V ¡7pack (3-phase Inverter + Brake) ¡Flatbase Type / Insulated Package / Copper (non-plating) base plate ¡RoHS Directive compliant APPLICATION General purpose Inverters, Servo Amplifiers OUTLINE DRAWING & CIRCUIT DIAGRAM 1.15 0.65 (20.5) LABEL TERMINAL t = 0.8 4-φ5.5 MOUNTING HOLES (20.5) 0.8 (21.14) 6.5 1.2 (102.25) (110) ＊114.06 ＊91.2 ＊95 ＊75.96 ＊79.76 ＊60.72 ＊64.52 136.9 121.7 110 ±0.5 99 94.5 SECTION A 17 13 ＊45.48 ＊49.28 ＊30.24 ＊34.04 0 (7.75) ＊15 ＊18.8 12.5 0.8 (50) 35 10 9 22 39 8 7 6 36 5 1 2 3 (21.14) A 6 12 13.5 20.71 8.5 17 22.86 22.86 TH1(11) NTC P(35) GuP(34) GvP(26) EvP(25) U(1) EwP(17) V(2) Division of Dimension EB(5) GuN(30) GvN(22) GwN(14) N(36) EuN(29) EvN(21) EwN(13) Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2 W(3) GB(6) φ0.5 Tolerance otherwise specified GwP(18) B(4) ＊Pin positions with tolerance 6-M5 NUTS 22.86 TH2(10) EuP(33) ＊15.48 ＊11.66 4 0 6.5 12.5 (SCREWING DEPTH) 17 +1 -0.5 ＊34.52 ＊30.72 11 39 50 ±0.5 57.5 62 77.1 17 12 6 12 17 12 6 13.64 14 (5.4) 7 ＊54.2 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 (3) (7.4) (3.81) 1.5 φ2.5 φ2.1 3.5 φ4.3 Dimensions in mm CIRCUIT DIAGRAM Jan. 2009 MITSUBISHI IGBT MODULES CM200RX-12A HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS INVERTER PART Symbol VCES VGES IC ICRM PC IE (Note.3) IERM(Note.3) (Tj = 25°C, unless otherwise specified) Parameter Collector-emitter voltage Gate-emitter voltage Conditions G-E Short C-E Short DC, TC = 68°C Collector current Pulse Maximum collector dissipation TC = 25°C Emitter current TC = 25°C (Free wheeling diode forward current) Pulse (Note. 1) (Note. 4) (Note. 1, 5) (Note. 1) (Note. 4) Rating 600 ±20 200 400 735 200 400 Unit Rating 600 ±20 100 200 400 600 100 200 Unit Rating –40 ~ +150 –40 ~ +125 2500 ±0 ~ +100 2.5 ~ 3.5 2.5 ~ 3.5 330 Unit V A W A BRAKE PART Symbol VCES VGES IC ICRM PC VRRM(Note.3) IF (Note.3) IFRM(Note.3) Parameter Collector-emitter voltage Gate-emitter voltage Conditions G-E Short C-E Short DC, TC = 75°C Collector current Pulse Maximum collector dissipation TC = 25°C Repetitive peak reverse voltage TC = 25°C Forward current Pulse (Note. 1) (Note. 4) (Note. 1, 5) (Note. 1) (Note. 4) V A W V A MODULE Symbol Tj Tstg Viso — — — — Parameter Junction temperature Storage temperature Isolation voltage Base plate flatness Torque strength Torque strength Weight Conditions Terminals to base plate, f = 60Hz, AC 1 minute (Note. 8) On the centerline X, Y M5 screw Main terminals M5 screw Mounting (Typical) °C Vrms μm N·m g +：convex –：concave – Y + Heat sink side Note. 8: The base plate flatness measurement points are in the following figure. X – + Heat sink side Jan. 2009 2 MITSUBISHI IGBT MODULES CM200RX-12A HIGH POWER SWITCHING USE ELECTRICAL CHARACTERISTICS INVERTER PART Symbol (Tj = 25°C, unless otherwise specified) Parameter Conditions ICES VGE(th) IGES VCE = VCES, VGE = 0V Collector cutoff current Gate-emitter threshold voltage IC = 20mA, VCE = 10V Gate leakage current ±VGE = VGES, VCE = 0V VCE(sat) Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note.3) Qrr (Note.3) Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge VEC(Note.3) Emitter-collector voltage Rth(j-c)Q Rth(j-c)R RGint RG (Note. 6) IC = 200A, VGE = 15V IC = 200A, VGE = 15V VCE = 10V VGE = 0V Tj = 25°C Tj = 125°C Chip (Note. 6) VCC = 300V, IC = 200A, VGE = 15V VCC = 300V, IC = 200A VGE = ±15V, RG = 5.1Ω Inductive load (IE = 200A) (Note. 6) IE = 200A, VGE = 0V IE = 200A, VGE = 0V Thermal resistance per IGBT (Note. 1) (Junction to case) per free wheeling diode Internal gate resistance TC = 25°C, per switch External gate resistance Tj = 25°C Tj = 125°C Chip Min. — 5 — — — — — — — — — — — — — — — — — — — — 3.0 Limits Typ. — 6 — 1.7 1.9 1.6 — — — 530 — — — — — 5 2.0 1.95 1.9 — — 0 — Max. 1 7 0.5 2.1 — — 27 2.7 0.8 — 120 150 350 600 200 — 2.8 — — 0.17 0.33 — 31 Min. — 5 — — — — — — — — — — — — — — — 6.0 Limits Typ. — 6 — 1.7 1.9 1.6 — — — 270 — 2.0 1.95 1.9 — — 0 — Max. 1 7 0.5 2.1 — — 13.3 1.4 0.45 — 1 2.8 — — 0.31 0.59 — 62 Unit mA V μA V nF nC ns μC V K/W Ω BRAKE PART Symbol Parameter Conditions ICES VGE(th) IGES VCE = VCES, VGE = 0V Collector cutoff current Gate-emitter threshold voltage IC = 10mA, VCE = 10V Gate leakage current ±VGE = VGES, VCE = 0V VCE(sat) Collector-emitter saturation voltage Cies Coes Cres QG IRRM(Note.3) Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Repetitive peak reverse current VFM(Note.3) Forward voltage drop Rth(j-c)Q Rth(j-c)R RGint RG (Note. 6) IC = 100A, VGE = 15V IC = 100A, VGE = 15V VCE = 10V VGE = 0V Tj = 25°C Tj = 125°C Chip (Note. 6) VCC = 300V, IC = 100A, VGE = 15V VR = VRRM (Note. 6) IF = 100A IF = 100A per IGBT Thermal resistance (Note. 1) per Clamp diode (Junction to case) TC = 25°C Internal gate resistance External gate resistance Tj = 25°C Tj = 125°C Chip Unit mA V μA V nF nC mA V K/W Ω Jan. 2009 3 MITSUBISHI IGBT MODULES CM200RX-12A HIGH POWER SWITCHING USE NTC THERMISTOR PART Symbol R ΔR/R B(25/50) P25 Parameter Conditions TC = 25°C TC = 100°C, R100 = 493Ω Approximate by equation TC = 25°C Zero power resistance Deviation of resistance B constant Power dissipation (Note. 7) Min. 4.85 –7.3 — — Limits Typ. 5.00 — 3375 — Max. 5.15 +7.8 — 10 Min. Limits Typ. Max. — 0.015 — Unit kΩ % K mW MODULE Symbol Rth(c-f) Parameter Conditions Contact thermal resistance Thermal grease applied (Note. 1) per 1 module (Case to fin) (Note. 2) Unit K/W Note.1: Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.) 2: Typical value is measured by using thermally conductive grease of λ = 0.9W/(m·K). 3: IE, IERM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). IF, IFRM, VF, VRRM and IRRM represent ratings and characteristics of the Clamp diode of Brake part. 4: Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed Tjmax rating. 5: Junction temperature (Tj) should not increase beyond 150°C. 6: Pulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of the test circuit for VCE(sat) and VEC) 1 7: B(25/50) = In( R25 )/( 1 ) T50 R50 T25 R25: resistance at absolute temperature T25 [K]; T25 = 25 [°C]+273.15 = 298.15 [K] R50: resistance at absolute temperature T50 [K]; T50 = 50 [°C]+273.15 = 323.15 [K] Dimensions in mm (tolerance: ±1mm) 92.4 100.2 101.8 106.0 91.4 79.4 55.9 44.9 0 22.9 LABEL SIDE 33.9 Chip Location (Top view) 0 0 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 (50) (62) (77.1) 17.4 35 24.4 28.0 Tr UP Di UP Tr UN Di UN 35.0 Tr VP Di VP Tr WP Di WP Tr VN Di VN 36 1 2 3 Di Tr Br WN Th Di WN Tr Br 12 18.3 11 10 9 26.8 8 7 6 39.7 5 4 (110) (121.7) (136.9) Each mark points the center position of each chip. Tr**: IGBT, Di**: FWDi (DiBr: Clamp diode), Th: NTC thermistor Jan. 2009 4 MITSUBISHI IGBT MODULES CM200RX-12A HIGH POWER SWITCHING USE P V VGE = 15V P U B VGE = 0V IC GuP P GuP EuP EuP U VGE = 0V VGE = 15V GuN IC GuN EuN VGE = 15V V N EuN IC GB V N EB N P side Inverter part Tr (example of U arm) VGE = 0V(GvP-EvP, GwP-EwP, GvN-EvN, GwN-EwN, GB-EB) N side Inverter part Tr (example of U arm) VGE = 0V(GvP-EvP, GwP-EwP, GvN-EvN, GwN-EwN, GB-EB) Br Tr VGE = 0V(GuP-EuP, GvP-EvP, GwP-EwP, GuN-EuN, GvN-EvN, GwN-EwN) VCE(sat) test circuit P V P VGE = 0V VGE = 0V IE GuP P V GuP EuP IF EuP B U U VGE = 0V VGE = 0V GuN GuN EuN EuN IE VGE = 0V V GB EB N N N N side Inverter part Di (example of U arm) VGE = 0V(GvP-EvP, GwP-EwP, GvN-EvN, GwN-EwN, GB-EB) P side Inverter part Di (example of U arm) VGE = 0V(GvP-EvP, GwP-EwP, GvN-EvN, GwN-EwN, GB-EB) Br Di VGE = 0V(GuP-EuP, GvP-EvP, GwP-EwP, GuN-EuN, GvN-EvN, GwN-EwN) VEC/VFM test circuit Arm VGE IE IE 90% 0V 0% trr Load –VGE + VCC IC 0A 90% +VGE 0V RG VGE –VGE t VCE Irr IC 10% 0A td(on) tr td(off) Switching time test circuit and waveforms 1/2 ✕ Irr Qrr = 1/2 ✕ Irr ✕ trr tf trr, Qrr test waveform Jan. 2009 5 MITSUBISHI IGBT MODULES CM200RX-12A HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part Tj = 25°C 12 13 300 11 200 10 100 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 15 VGE = 20V 9 8 0 1 2 3 4 5 6 7 8 9 10 VGE = 15V 3 2.5 2 1.5 1 0.5 0 Tj = 25°C Tj = 125°C 0 100 200 300 400 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) Inverter part 10 103 Tj = 25°C 8 6 4 IC = 200A IC = 400A 2 7 5 3 2 102 7 5 3 2 IC = 80A 0 6 8 10 12 14 16 18 101 20 100 7 5 3 2 1 1.5 2 CAPACITANCE CHARACTERISTICS (TYPICAL) Inverter part HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 104 Cies 101 7 5 3 2 0.5 EMITTER-COLLECTOR VOLTAGE VEC (V) SWITCHING TIME (ns) 7 5 3 2 0 Tj = 25°C Tj = 125°C 2.5 3 3.5 4 GATE-EMITTER VOLTAGE VGE (V) 102 CAPACITANCE (nF) 3.5 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A) COLLECTOR CURRENT IC (A) 400 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) Inverter part Coes Cres VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 7 5 3 2 103 tf 7 5 td(off) 3 2 102 7 td(on) 5 3 2 101 7 5 3 2 100 1 10 Conditions: VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 125°C Inductive load tr 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) Jan. 2009 6 MITSUBISHI IGBT MODULES CM200RX-12A HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 103 102 7 5 3 2 7 5 3 2 SWITCHING LOSS (mJ/pulse) SWITCHING TIME (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part tf td(off) 102 7 5 3 2 td(on) tr Conditions: VCC = 300V VGE = ±15V IC = 200A Tj = 125°C Inductive load 101 7 5 3 2 100 0 10 2 3 5 7 101 2 7 5 3 2 Eoff 101 7 5 3 2 Conditions: 100 VCC = 300V 7 5 VGE = ±15V 3 IC, IE = 200A 2 Tj = 125°C Inductive load 10–1 0 10 2 3 5 7 101 Err 3 5 7 102 2 3 5 7 103 7 5 3 2 2 3 101 1 10 5 7 102 GATE RESISTANCE RG (Ω) 3 5 7 102 2 3 5 7 103 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j–c) IC = 200A VCC = 200V 15 VCC = 300V 10 5 200 2 EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) Inverter part GATE-EMITTER VOLTAGE VGE (V) 2 REVERSE RECOVERY CHARACTERISTICS OF FREE WHEELING DIODE (TYPICAL) Inverter part 103 7 Conditions: VCC = 300V 5 VGE = ±15V 3 RG = 5.1Ω Tj = 25°C 2 Inductive load Irr 102 trr lrr (A), trr (ns) SWITCHING LOSS (mJ/pulse) 100 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part Eon 0 Err COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) 7 5 3 2 0 Eon GATE RESISTANCE RG (Ω) 102 20 Eoff 5 3 2 10–1 1 10 5 7 102 3 Conditions: VCC = 300V VGE = ±15V RG = 5.1Ω 101 Tj = 125°C 7 Inductive load 400 600 7 Single pulse 5 TC = 25°C 3 2 10–1 7 5 3 2 10–2 7 5 Inverter IGBT part : Per unit base = Rth(j–c) = 0.17K/W 3 Inverter FWDi part : Per unit base = Rth(j–c) = 0.33K/W : Per unit base = Rth(j–c) = 0.31K/W 2 Brake IGBT part Brake Clamp-Di part : Per unit base = Rth(j–c) = 0.59K/W 10–3 10–52 3 5710–42 3 5710–32 3 5710–22 3 5710–12 3 57 100 2 3 57 101 800 GATE CHARGE QG (nC) TIME (s) Jan. 2009 7 MITSUBISHI IGBT MODULES CM200RX-12A HIGH POWER SWITCHING USE CLAMP DIODE FORWARD CHARACTERISTICS (TYPICAL) Brake part 103 3.5 VGE = 15V 3 FORWARD CURRENT IF (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Brake part 2.5 2 1.5 1 0.5 0 Tj = 25°C Tj = 125°C 0 50 100 150 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 200 Tj = 25°C Tj = 125°C 0 0.5 1 1.5 2 2.5 3 3.5 4 FORWARD VOLTAGE VF (V) COLLECTOR CURRENT IC (A) Jan. 2009 8