MITSUBISHI IGBT MODULES CM200TL-24NF HIGH POWER SWITCHING USE CM200TL-24NF ¡IC ................................................................... 200A ¡VCES ......................................................... 1200V ¡Insulated Type ¡6-elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 135 (6.05) (6.05) 110 ±0.5 17.5 10.5 26 26 11.7 10.5 18.7 V W B (6.05) U 18 (13) 10.5 10.5 CN 25 110 20 (6.05) 10.5 (13) 11 6-M5 NUTS 4 LABEL +1 25 UP 13 30.5 46.3 VP 24.1–0.5 WP 1 (SCREWING DEPTH) 13.75 26.5 4-φ5.5 MOUNTING HOLES 1 16.5 P 48.75 B 1 78 ±0.5 20 10.5 A 8 N 1 Housing Type of A and B (J.S.T.Mfg.Co.Ltd) A = B8P-VH-FB-B, B = B2P-VH-FB-B P B CN-7 CN-8 N NC NC NC UP-1 UP-2 VP-1 VP-2 CN-5 CN-6 WP-1 WP-2 W V U CN-3 CN-4 CN-1 CN-2 CIRCUIT DIAGRAM Feb. 2009 1 MITSUBISHI IGBT MODULES CM200TL-24NF HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight Conditions G-E Short C-E Short DC, TC = 72°C*1 Pulse Ratings 1200 ±20 200 400 200 400 1160 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 750 (Note 2) Pulse TC = 25°C (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M5 screw Typical value Unit V V A A A A W °C °C Vrms N•m N•m g ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Parameter Test conditions Limits Typ. — Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. — VGE(th) Gate-emitter threshold voltage IC = 20mA, VCE = 10V 6 7 8 V IGES Gate leakage current ±VGE = VGES, VCE = 0V — — — — — — — — — — — — — — — — — 1.6 — 2.1 2.4 — — — 1000 — — — — — 9 — — — 0.051 — 0.5 3.1 — 35 3 0.68 — 130 70 400 350 150 — 3.8 0.11 0.17 µA VCE(sat) Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance Tj = 25°C Tj = 125°C IC = 200A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 200A, VGE = 15V VCC = 600V, IC = 200A VGE = ±15V RG = 1.6Ω, Inductive load IE = 200A IE = 200A, VGE = 0V IGBT part (1/6 module)*1 FWDi part (1/6 module)*1 Case to heat sink, Thermal compound Applied (1/6 module)*2 External gate resistance — 21 mA V nF nF nF nC ns ns ns ns ns µC V K/W K/W K/W Ω *1 : Case temperature (Tc) measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Feb. 2009 2 MITSUBISHI IGBT MODULES CM200TL-24NF HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 350 13 12 250 200 11 150 100 10 50 9 0 2 4 6 8 4 VGE = 15V 3 2 1 Tj = 25°C Tj = 125°C 0 10 0 50 100 150 200 250 300 350 400 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 10 103 Tj = 25°C EMITTER CURRENT IE (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Tj = 25°C 15 300 0 CAPACITANCE Cies, Coes, Cres (nF) VGE = 20V 8 6 4 IC = 400A IC = 200A 2 IC = 80A 0 6 8 10 12 14 16 18 7 5 3 2 102 7 5 3 2 101 20 2 3 4 5 CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 7 5 3 2 Cies 101 Coes 100 7 5 3 2 1 0 EMITTER-COLLECTOR VOLTAGE VEC (V) 102 7 5 3 2 Tj = 25°C Tj = 125°C GATE-EMITTER VOLTAGE VGE (V) SWITCHING TIME (ns) COLLECTOR CURRENT IC (A) 400 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) Cres VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 102 td(on) 7 5 3 2 tr Conditions: VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 125°C Inductive load 101 7 5 3 2 100 1 10 COLLECTOR-EMITTER VOLTAGE VCE (V) td(off) tf 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM200TL-24NF NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (ratio) 7 5 3 Irr 2 trr 102 7 5 Conditions: VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 25°C Inductive load 3 2 101 1 10 2 3 5 7 102 2 3 5 7 103 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 Single Pulse, 7 5 TC = 25°C 3 Under the chip 2 10–1 7 5 3 2 IGBT part: 10–2 Per unit base = 7 5 Rth(j–c) = 0.11K/W FWDi part: 3 Per unit base = 2 Rth(j–c) = 0.17K/W –3 10 10–2 7 5 3 2 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 EMITTER CURRENT IE (A) TIME (s) SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) 7 Conditions: VCC = 600V 5 VGE = ±15V 3 RG = 1.6Ω Tj = 125°C 2 Inductive load C snubber at bus 101 SWITCHING LOSS (mJ/pulse) 102 7 Esw(off) Esw(on) 7 5 3 2 2 3 5 7 102 2 3 Esw(on) 5 3 Esw(off) 2 101 5 3 2 100 0 10 5 7 103 Conditions: VCC = 600V VGE = ±15V IC = 200A Tj = 125°C Inductive load C snubber at bus 7 2 3 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG (Ω) RECOVERY LOSS vs. IE (TYPICAL) RECOVERY LOSS vs. GATE RESISTANCE (TYPICAL) 102 102 7 7 5 3 Err 2 101 Conditions: VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 125°C Inductive load C snubber at bus 7 5 3 2 100 1 10 10–1 7 5 3 2 102 100 1 10 RECOVERY LOSS (mJ/pulse) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 RECOVERY LOSS (mJ/pulse) SWITCHING LOSS (mJ/pulse) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) HIGH POWER SWITCHING USE 2 3 5 7 102 2 3 5 3 2 101 7 5 3 2 100 0 10 5 7 103 EMITTER CURRENT IE (A) Err Conditions: VCC = 600V VGE = ±15V IE = 200A Tj = 125°C Inductive load C snubber at bus 2 3 5 7 101 2 3 5 7 102 GATE RESISTANCE RG (Ω) Feb. 2009 4 MITSUBISHI IGBT MODULES CM200TL-24NF HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 200A VCC = 400V 16 VCC = 600V 12 8 4 0 0 200 400 600 800 1000 1200 1400 GATE CHARGE QG (nC) Feb. 2009 5