MITSUBISHI IGBT MODULES CM30TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. (2 TYP.) BvN EvN M F R BwN EwN F R L K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. R L Q TAB #110, t = 0.5 TAB #250, t = 0.8 H G P R P (BuP) GuP (BvP) GvP (BwP) GwP EuP EvP EwP u v w (BuN) GuN (BvN) GvN EuN Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking (BwN) GwN EwN EvN N Outline Drawing and Circuit Diagram Dimensions A Inches 5.0 Millimeters Dimensions Inches Millimeters 127.0 K 0.85 21.5 B 4.33±0.01 110.0±0.2 L 0.83 21.0 C 3.86 98.0 M 0.75 19.0 D 2.20 56.0 N 0.71 18.0 E 1.57 40.0 P 0.69 17.5 F 1.12 28.5 Q 0.65 16.5 G 1.04 26.5 R 0.3 7.5 H 1.01 25.6 S J 0.98 25.0 0.22 Dia. Dia. 5.5 Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM30TF-24H is a 1200V (VCES), 30 Ampere Six-IGBT Module. Type Current Rating Amperes (30) VCES Volts (x 50) CM 30 24 Sep.1998 MITSUBISHI IGBT MODULES CM30TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM30TF-24H Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 30 Amperes ICM 60* Amperes IE 30 Amperes Peak Emitter Current** IEM 60* Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) Pc 310 Watts Mounting Torque, M5 Mounting – 1.47 ~ 1.96 N·m Weight – 390 Grams Viso 2500 Vrms Collector Current (TC = 25°C) Peak Collector Current Emitter Current** (TC = 25°C) Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V – – 1.0 mA IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 3mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) Gate Leakage Current IC = 30A, VGE = 15V – 2.5 3.4** Volts IC = 30A, VGE = 15V, Tj = 150°C – 2.25 – Volts Total Gate Charge QG VCC = 600V, IC = 30A, VGE = 15V – 150 – nC Emitter-Collector Voltage VEC IE = 30A, VGE = 0V – – 3.5 Volts Min. Typ. Max. Units – – 6 nF – – 2.1 nF – – 1.2 nF ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time Switching Turn-off Delay Time Times Fall Time Test Conditions VGE = 0V, VCE = 10V – – 100 ns tr VCC = 600V, IC = 30A, – – 200 ns td(off) VGE1 = VGE2 = 15V, RG = 10Ω – – 150 ns – – 350 ns tf Diode Reverse Recovery Time trr IE = 30A, diE/dt = –60A/µs – – 250 ns Diode Reverse Recovery Charge Qrr IE = 30A, diE/dt = –60A/µs – 0.22 – µC Min. Typ. Max. Units Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.50 °C/W Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 1.40 °C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.042 °C/W Sep.1998 MITSUBISHI IGBT MODULES CM30TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE 60 Tj = 25°C 50 5 12 15 COLLECTOR CURRENT, IC, (AMPERES) 40 11 30 10 20 9 10 7 VCE = 10V Tj = 25°C Tj = 125°C 50 40 30 20 10 8 0 2 4 6 8 0 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Tj = 25°C EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 10 IC = 60A 8 IC = 30A 6 4 2 IC = 12A 0 4 8 12 16 20 16 101 COLLECTOR CURRENT, IC, (AMPERES) REVERSE RECOVERY TIME, t rr, (ns) 102 10 0 20 30 40 Cies 101 7 5 3 VGE = 0V 100 Coes 10-1 Cres 2 1.5 60 101 2 2.0 2.5 3.0 trr 100 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE Irr 101 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 101 102 10-2 10-1 3.5 di/dt = -60A/µsec Tj = 25°C 101 100 50 CAPACITANCE VS. VCE (TYPICAL) 103 tr 1 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) VCC = 600V VGE = ±15V RG = 10Ω Tj = 125°C 2 COLLECTOR-CURRENT, IC, (AMPERES) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(on) 3 GATE-EMITTER VOLTAGE, VGE, (VOLTS) EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) tf VCE = 15V Tj = 25°C Tj = 125°C 4 0 20 3 td(off) 101 100 12 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 102 8 102 7 Tj = 25°C 5 100 1.0 0 4 CAPACITANCE, Cies, Coes, Cres, (pF) 0 10-1 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) VGE = 20V COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 60 SWITCHING TIME, (ns) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) IC = 30A 16 VCC = 400V VCC = 600V 12 8 4 0 0 40 80 120 160 200 240 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM30TF-24H TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 10-2 10-1 100 101 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.5°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) MEDIUM POWER SWITCHING USE INSULATED TYPE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 10-2 10-1 100 101 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 1.4°C/W 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) Sep.1998