CM50TL-24NF Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Six IGBTMOD™ NF-Series Module 50 Amperes/1200 Volts A D E F G K H J M J N 8 1 1 1 1 B C CN UP B U V N W Q U L T K K S V WP AB AA P K VP R K R P K R K X W Y P B CN-7 CN-8 UP-1 UP-2 VP-1 VP-2 WP-1 WP-2 U V W CN-5 CN-3 CN-1 CN-6 CN-4 CN-2 NC NC NC N Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M Inches 4.72 2.17 1.39 4.17±0.02 0.43 0.28 0.54 1.61 0.67 0.47 M5 0.22 Dia. Millimeters 120.0 55.0 35.0 106.0±0.5 11.0 7.0 13.62 40.78 17.0 12.0 M5 Dia. 5.5 Housing Types (J.S.T. Mfg. Co. Ltd.) AA – B8P-VH-FB-B AB – B2P-VH-FB-B 10/10 Rev. 1 Dimensions Inches Millimeters N 1.23 32.0 P 0.47 11.75 Q 0.53 13.5 R 0.91 23.0 S 0.87 22.0 T 0.76 19.75 U 0.42 10.75 V 0.87+0.04/-0.02 22.0+1.0/-0.5 W 0.91 23.2 X 0.63 16.0 Y 0.12 3.0 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ UPS £ Photovoltaic/Fuel Cell Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM50TL-24NF is a 1200V (VCES), 50 Ampere SixIGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 50 24 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM50TL-24NF Six IGBTMOD™ NF-Series Module 50 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics Symbol Power Device Junction Temperature CM50TL-24NF Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 1200 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts Storage Temperature Collector Current (TC = 94°C)* Peak Collector Current (Tj ≤ 150°C) IC 50 Amperes ICM 100** Amperes Emitter Current*** IE 50 Amperes Peak Emitter Current*** IEM 100** Amperes Maximum Collector Dissipation (TC = 25°C, Tj < 150°C) PC 390 Watts Mounting Torque, M5 Mounting Screws — 31 in-lb Mounting Torque, M5 Main Terminal Screws — 31 in-lb Module Weight (Typical) — 350 Grams VISO 2500 Volts Isolation Voltage, AC 1 minute, 60Hz Sinusoidal Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Collector Cutoff Current Gate-Emitter Threshold Voltage Gate Leakage Current Collector-Emitter Saturation Voltage Symbol Test Conditions Min. Typ. Max. ICES VCE = VCES, VGE = 0V — — 1.0 mA VGE(th) IC = 5.0mA, VCE = 10V 6 7 8 Volts IGES VGE = VGES, VCE = 0V — — 0.5 µA VCE(sat) IC = 50A, VGE = 15V, Tj = 25°C — 2.1 3.0 Volts IC = 50A, VGE = 15V, Tj = 125°C — 2.4 — Volts — — 8.5 nf — — 0.75 nf — — 0.17 nf — 250 — nC — — 100 ns Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Total Gate Charge Units QG VCE = 10V, VGE = 0V VCC = 600V, IC = 50A, VGE = 15V Inductive Turn-on Delay Time Load Turn-on Rise Time tr VCC = 600V, IC = 50A, — — 50 ns Switch Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, — — 300 ns Time Turn-off Fall Time Reverse Recovery Time*** td(on) tf RG = 6.3Ω, IE = 50A, — — 350 ns trr Inductive Load Switching Operation — — 100 ns — 2.0 — µC — — 3.8 Volts Reverse Recovery Charge*** Qrr Emitter-Collector Voltage*** VEC IE = 50A, VGE = 0V *TC, Tf measured point is just under the chips. **Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. ***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 10/10 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM50TL-24NF Six IGBTMOD™ NF-Series Module 50 Amperes/1200 Volts Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case* Rth(j-c)Q Per IGBT 1/6 Module — — 0.32 °C/W Thermal Resistance, Junction to Case* Rth(j-c)D Per FWDi 1/6 Module — — 0.43 °C/W Rth(c-f) Per 1/6 Module, Thermal Grease Applied — — 0.085 °C/W 6.3 — 96 Ω Contact Thermal Resistance External Gate Resistance RG *TC, Tf measured point is just under the chips. COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 100 4 Tj = 25°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 15 13 75 12 50 11 25 10 9 0 0 2 4 6 8 1 0 25 50 75 8 IC = 50A 4 IC = 20A 2 0 100 IC = 100A 6 6 8 10 12 14 16 18 COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 Tj = 25°C Tj = 125°C CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) 2 Tj = 25°C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 103 102 101 100 3 0 10 10 VGE = 15V Tj = 25°C Tj = 125°C 0 1 2 3 4 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 10/10 Rev. 1 5 103 VGE = 0V 101 Cies 100 SWITCHING TIME, (ns) COLLECTOR CURRENT, IC, (AMPERES) VGE = 20V COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) OUTPUT CHARACTERISTICS (TYPICAL) Coes Cres 10-1 10-2 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 102 VCC = 600V VGE = ±15V RG = 6.3Ω Tj = 125°C Inductive Load 20 tf td(off) td(on) tr 101 100 100 101 102 COLLECTOR CURRENT, IC, (AMPERES) 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM50TL-24NF Six IGBTMOD™ NF-Series Module 50 Amperes/1200 Volts REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) 10-2 10-3 VCC = 600V 12 8 4 0 0 80 160 240 320 400 100 ESW(on) ESW(off) 10-1 100 101 102 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL) REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) 101 101 102 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 10-2 10-1 100 100 10-1 100 102 Err VCC = 600V VGE = ±15V RG = 6.3Ω Tj = 125°C Inductive Load C Snubber at Bus 101 EMITTER CURRENT, IE, (AMPERES) GATE RESISTANCE, RG, (Ω) 10-1 VCC = 400V VCC = 600V VGE = ±15V RG = 6.3Ω Tj = 125°C Inductive Load C Snubber at Bus GATE CHARGE, QG, (nC) VCC = 600V VGE = ±15V IC = 50A Tj = 125°C Inductive Load C Snubber at Bus ESW(on) ESW(off) 10-3 16 101 EMITTER CURRENT, IE, (AMPERES) 100 100 100 SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 101 102 101 IC = 50A 102 REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 101 100 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 102 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 102 103 VCC = 600V VGE = ±15V RG = 6.3Ω Tj = 25°C Inductive Load Irr trr REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) REVERSE RECOVERY TIME, trr, (ns) 103 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) GATE CHARGE VS. VGE VCC = 600V VGE = ±15V IE = 50A Tj = 125°C Inductive Load C Snubber at Bus 101 Err 100 100 101 102 GATE RESISTANCE, RG, (Ω) 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.32°C/W (IGBT) Rth(j-c) = 0.43°C/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) 4 10/10 Rev. 1