CM50TU-24F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Six IGBTMOD™ 50 Amperes/1200 Volts J S - NUTS (5 TYP) T (4 TYP.) K K R CM P N P GUP EUP GVP EVP L N L GWP EWP N L B E Q M GUN EUN TC MEASURING POINT GVN EVN U L TC MEASURING POINT W V J GWN EWN Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. J N L N L V D A W - THICK x X - WIDE TAB (12 PLACES) H C G F P GWP GVP GUP RTC RTC GWN GVN RTC RTC EVN EUN N A W V U GUN RTC EWP EVP EUP Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking RTC EWN Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches A 4.02 102.0 M 0.47 11.85 3.58 91.0 N 0.75 19.1 P 0.74 18.7 39.3 B C 1.14 +0.04/-0.02 29.0 +1.0/-0.5 D 3.15±0.01 80.0±0.25 Q 1.55 E 2.91±0.01 74.0±0.25 R 0.05 F 0.16 4.0 S M4 G 1.02 26.0 T 0.22 Dia. Millimeters 1.25 Applications: □ AC Motor Control □ UPS □ Battery Powered Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM50TU-24F is a 1200V (VCES), 50 Ampere SixIGBT IGBTMOD™ Power Module. M4 5.5 Dia. Type Current Rating Amperes VCES Volts (x 50) CM 50 24 H 0.31 8.1 U 0.02 0.5 J 0.79 20.0 V 0.12 3.05 K 0.39 10.0 W 0.02 0.5 L 0.43 11.0 X 0.110 2.79 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50TU-24F Trench Gate Design Six IGBTMOD™ 50 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Symbol CM50TU-24F Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 50 Amperes ICM 100* Amperes IE 50 Amperes Peak Emitter Current** IEM 100* Amperes Maximum Collector Dissipation (Tj < 150°C) Pc 320 Watts Mounting Torque, M4 Main Terminal – 15 in-lb Mounting Torque, M5 Mounting – 31 in-lb – 570 Grams Viso 2500 Volts Storage Temperature Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Min. Typ. Max. Collector-Cutoff Current Symbol ICES VCE = VCES, VGE = 0V Test Conditions – – 1 mA Gate Leakage Voltage IGES VGE = VGES, VCE = 0V – – 20 µA Gate-Emitter Threshold Voltage VGE(th) IC = 5.0mA, VCE = 10V 5 6 7 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 50A, VGE = 15V, Tj = 25°C – 1.8 2.4 Volts IC = 50A, VGE = 15V, Tj = 125°C – 1.9 – Volts Total Gate Charge QG VCC = 600V, IC = 50A, VGE = 15V – 550 – nC Emitter-Collector Voltage** VEC IE = 50A, VGE = 0V – – * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Units 3.2 Volts Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50TU-24F Trench Gate Design Six IGBTMOD™ 50 Amperes/1200 Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Test Conditions VCE = 10V, VGE = 0V Min. Typ. Max. – – 20 – – Reverse Transfer Capacitance Cres – – Inductive Turn-on Delay Time td(on) VCC = 600V, IC = 50A, – – Load Rise Time tr VGE1 = VGE2 = 15V, – Switch Turn-off Delay Time td(off) RG = 6.3⍀, – Times Fall Time 0.85 0.5 Units nf nf nf 100 ns – 50 ns – 300 ns tf Inductive Load – – 300 ns Diode Reverse Recovery Time** trr Switching Operation – – 150 ns Diode Reverse Recovery Charge** Qrr IE = 50A, – 2.1 – µC Typ. Max. Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Symbol Test Conditions Min. Rth(j-c)Q Per IGBT 1/6 Module, Tc Reference – Units 0.39 °C/W 0.70 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/6 Module, Tc Reference – – – 0.26 – 0.018 Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c)'Q Per IGBT 1/6 Module, °C/W Tc Reference Point Under Chip Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – °C/W ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50TU-24F Trench Gate Design Six IGBTMOD™ 50 Amperes/1200 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 80 VGE = 20V 9 60 8.5 40 20 8 0 1 2 3 VGE = 15V Tj = 25°C Tj = 125°C 2.5 2.0 1.5 1.0 0.5 0 4 3 IC = 100A IC = 50A 2 IC = 20A 1 20 40 60 80 0 100 4 8 12 COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 CAPACITANCE, Cies, Coes, Cres, (nF) 101 100 103 VGE = 0V Tj = 25°C Cies 101 100 102 td(on) 101 VCC = 600V VGE = ±15V RG = 6.3 Ω Tj = 125°C Inductive Load tr Coes 0.5 1.0 1.5 2.0 2.5 3.0 101 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) GATE CHARGE, VGE Irr 101 100 100 101 VCC = 600V VGE = ±15V RG = 6.3 Ω Tj = 25°C Inductive Load 101 EMITTER CURRENT, IE, (AMPERES) 100 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) trr REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 102 IC = 50A 16 VCC = 400V VCC = 600V 12 100 100 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 102 REVERSE RECOVERY TIME, trr, (ns) 100 8 4 101 102 COLLECTOR CURRENT, IC, (AMPERES) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) 0 10-1 10-1 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 101 100 10-3 10-2 10-1 100 0 200 400 600 GATE CHARGE, QG, (nC) 800 101 Per Unit Base Rth(j-c) = 0.39°C/W (IGBT) Rth(j-c) = 0.7°C/W (FWDi) Single Pulse TC = 25°C 10-1 10-1 10-2 10-2 10-3 0 20 tf td(off) Cres 10-1 4 16 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 102 EMITTER CURRENT, IE, (AMPERES) Tj = 25°C 0 0 4 SWITCHING TIME, (ns) 0 5 3.0 9.5 15 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 10 11 Tj = 25oC COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 100 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10-5 TIME, (s) 10-4 10-3 10-3