MITSUBISHI IGBT MODULES CM75DU-12F HIGH POWER SWITCHING USE CM75DU-12F ¡IC ..................................................................... 75A ¡VCES ............................................................ 600V ¡Insulated Type ¡2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Tc measured point 94 80 ±0.25 4 G1E1 12 4 4 11 18 E2 G2 C1 E2 C2E1 2–φ6.5 MOUNTING HOLES 23 27 24 24 CM 48 23 24 17 13 7 13.5 2.5 16 TAB #110. t=0.5 RTC C2E1 C1 E2 LABEL 21.2 +1 30 –0.5 RTC G1 E1 25 7.5 16 2.5 E2 G2 3–M5NUTS 12mm deep CIRCUIT DIAGRAM Feb. 2009 MITSUBISHI IGBT MODULES CM75DU-12F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Torque strength — Weight Conditions G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Ratings 600 ±20 75 150 75 150 290 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 (Note 2) (Note 2) Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M6 screw Typical value Unit V V A A A A W °C °C Vrms N•m N•m g ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Parameter Test conditions Limits Typ. — Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. — VGE(th) Gate-emitter threshold voltage IC = 7.5mA, VCE = 10V 5 6 7 V IGES Gate leakage current ±VGE = VGES, VCE = 0V — — — — — — — — — — — — — — — — — — 8.3 — 1.6 1.6 — — — 465 — — — — — 1.4 — — — 0.07 — — 20 2.2 — 20 1.4 0.75 — 100 80 300 250 150 — 2.6 0.43 0.9 — µA VCE(sat) Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance External gate resistance Tj = 25°C Tj = 125°C IC = 75A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 75A, VGE = 15V VCC = 300V, IC = 75A VGE = ±15V RG = 8.3Ω, Inductive load IE = 75A IE = 75A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied*2 (1/2 module) Case temperature measured point is just under the chips 0.34*3 83 mA V nF nF nF nC ns ns ns ns ns µC V K/W K/W K/W K/W Ω Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. *1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Feb. 2009 2 MITSUBISHI IGBT MODULES CM75DU-12F HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 15 11 10 Tj=25°C VGE=20V 125 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) 150 9.5 100 9 75 8.5 50 8 25 7.5 0 0.5 1 1.5 2 2.5 3 3.5 VGE = 15V 2.5 2 1.5 1 Tj = 25°C Tj = 125°C 0.5 0 4 0 50 100 150 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 5 EMITTER CURRENT IE (A) Tj = 25°C 4 3 IC = 150A 2 IC = 75A 1 0 IC = 30A 6 8 10 12 14 16 18 102 7 5 3 2 101 7 5 3 2 0 0.5 1 1.5 2 2.5 3 3.5 4 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 103 7 5 7 5 3 2 3 2 Cies 101 7 5 3 2 100 7 5 3 2 Tj = 25°C 7 5 3 2 100 20 SWITCHING TIMES (ns) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 0 3 Coes Cres VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 102 7 5 3 2 101 7 5 3 2 td(off) tf td(on) tr Conditions: VCC = 300V VGE = ±15V RG = 8.3Ω Tj = 125°C 100 0 10 2 3 5 7101 2 3 5 7102 2 3 5 7103 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM75DU-12F HIGH POWER SWITCHING USE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 102 7 5 3 trr 2 Irr NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 101 7 5 Conditions: VCC = 300V VGE = ±15V RG = 8.3Ω Tj = 25°C 3 2 100 0 10 2 3 5 7 101 2 3 5 7 102 EMITTER CURRENT IE (A) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j–c) = 0.43K/W 3 FWDi part: 2 Per unit base = Rth(j–c) = 0.90K/W 100 7 5 3 2 3 2 10–1 10–1 10–2 10–2 7 5 3 2 7 5 3 2 10–3 7 5 3 2 7 5 3 2 Single Pulse TC = 25°C 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 75A 18 VCC = 200V 16 14 VCC = 300V 12 10 8 6 4 2 0 0 100 200 300 400 500 600 700 GATE CHARGE QG (nC) Feb. 2009 4