MITSUBISHI IGBT MODULES CM75TU-24H HIGH POWER SWITCHING USE INSULATED TYPE A B F G E H E G E H R 4 - Mounting Holes S K L GuP EuP D GvP EvP GwP EwP C GuN EuN TC Measured Point v u TC Measured M Point GwN EwN GvN EvN w N 5 - M5 NUTS E H E H K E J J TAB#110 t=0.5 P Q P GuP GvP GwP EuP EvP EwP U V W GuN GvN GwN EuN EvN EwN Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies N Outline Drawing and Circuit Diagram Dimensions Inches A 4.21 B 3.54±0.01 Millimeters Dimensions Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Inches Millimeters 3.75 107.0 K 0.15 90.0±0.25 L 0.67 17.0 102.0 M 1.91 48.5 80.0±0.25 N 0.03 0.8 C 4.02 D 3.15±0.01 E 0.43 11.0 P 0.32 8.1 F 0.91 23.0 Q 1.02 26.0 G 0.47 12.0 R 0.22 Dia. H 0.85 21.7 S 0.57 J 0.91 23.0 Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM75TU-24H is a 1200V (VCES), 75 Ampere SixIGBT Module. 5.5 Dia. Type Current Rating Amperes VCES Volts (x 50) 14.4 CM 75 24 Sep.1998 MITSUBISHI IGBT MODULES CM75TU-24H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Symbol CM75TU-24H Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 75 Amperes ICM 150* Amperes IE 75 Amperes Peak Emitter Current** IEM 150* Amperes Maximum Collector Dissipation (Tj < 150°C) Pc 600 Watts Storage Temperature Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** Mounting Torque, M5 Main Terminal – 2.5~3.5 N·m Mounting Torque, M5 Mounting – 2.5~3.5 N·m – 680 Grams Viso 2500 Vrms Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA Gate Leakage Voltage IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 7.5mA, VCE = 10V 4.5 6 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 75A, VGE = 15V, Tj = 25°C – 2.9 3.7 Volts IC = 75A, VGE = 15V, Tj = 125°C – 2.85 – Volts Total Gate Charge QG VCC = 600V, IC = 75A, VGE = 15V – 280 – nC Emitter-Collector Voltage* VEC IE = 75A, VGE = 0V – – 3.2 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) VCC = 600V, IC = 75A, – – 100 ns Load Rise Time tr VGE1 = VGE2 = 15V, – – 200 ns Turn-off Delay Time Times Fall Time 11 Units Output Capacitance VCE = 10V, VGE = 0V – Max. Cies Switch – Typ. Input Capacitance nF – – 3.7 nF – – 2.2 nF td(off) RG = 4.2Ω, Resistive – – 250 ns tf Load Switching Operation – – 350 ns Diode Reverse Recovery Time trr IE = 75A, diE/dt = -150A/µs – – 300 µC Diode Reverse Recovery Charge Qrr IE = 75A, diE/dt = -150A/µs – 0.41 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/6 Module Thermal Resistance, Junction to Case Rth(j-c)D Per Free-Wheel Diode 1/6 Module – Rth(c-f) Per Module, Thermal Grease Applied – Contact Thermal Resistance Min. – Typ. Max. Units 0.21 °C/W – 0.47 °C/W 0.015 – °C/W – Sep.1998 MITSUBISHI IGBT MODULES CM75TU-24H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) 150 125 15 12 VGE = 20V 100 11 75 10 50 9 25 8 120 90 60 30 0 0 0 2 4 6 8 10 VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 0 0 4 8 12 16 0 20 25 50 75 100 125 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 10 IC = 150A IC = 75A 4 IC = 30A 8 12 16 100 1.0 20 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 1.5 2.0 2.5 3.0 3.5 103 Cres REVERSE RECOVERY TIME, trr, (ns) tf td(on) tr 101 COLLECTOR CURRENT, IC, (AMPERES) 100 102 102 101 Irr 101 100 101 EMITTER CURRENT, IE, (AMPERES) 102 GATE CHARGE, VGE 102 trr 101 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) di/dt = -150A/µsec Tj = 25°C td(off) 102 100 100 10-1 10-1 4.0 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 Coes 100 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) VCC = 600V VGE = ±15V RG = 4.2 Ω Tj = 125°C Cies VGE = 0V 0 4 101 101 100 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 2 102 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 6 CAPACITANCE, Cies, Coes, Cres, (nF) Tj = 25°C 8 0 150 102 Tj = 25°C EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 150 SWITCHING TIME, (ns) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) IC = 75A 16 VCC = 400V VCC = 600V 12 8 4 0 0 100 200 300 400 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM75TU-24H TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.21°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) HIGH POWER SWITCHING USE INSULATED TYPE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.47°C/W 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) Sep.1998