Central CMPT5086 Surface mount pnp silicon transistor Datasheet

CMPT5086
CMPT5087
SURFACE MOUNT
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT5086 and
CMPT5087 are PNP silicon transistors manufactured
by the epitaxial planar process, epoxy molded in a
surface mount package, designed for applications
requiring high gain and low noise.
MARKING CODES: CMPT5086: C2P
CMPT5087: C2Q
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
ΘJA
UNITS
V
V
V
mA
mW
°C
°C/W
50
50
3.0
50
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
CMPT5086
SYMBOL
TEST CONDITIONS
MIN MAX
ICBO
VCB=10V
10
ICBO
VCB=35V
50
BVCBO
IC=100μA
50
BVCEO
IC=1.0mA
50
BVEBO
IE=100μA
3.0
VCE(SAT)
IC=10mA, IB=1.0mA
0.30
VBE(SAT)
IC=10mA, IB=1.0mA
0.85
hFE
VCE=5.0V, IC=0.1mA
150
500
hFE
VCE=5.0V, IC=1.0mA
150
hFE
VCE=5.0V, IC=10mA
150
fT
VCE=5.0V, IC=500μA, f=20MHz
40
Cob
VCB=5.0V, IE=0, f=1.0MHz
4.0
hfe
VCE=5.0V, IC=1.0mA, f=1.0kHz
150
600
NF
VCE=5.0V, IC=20mA, RS=10kΩ,
f=10Hz to 15.7kHz
3.0
NF
VCE=5.0V, IC=100μA, RS=3.0kΩ, f=1.0kHz
3.0
CMPT5087
MIN
MAX
10
50
50
50
3.0
0.30
0.85
250
800
250
250
-
UNITS
nA
nA
V
V
V
V
V
40
250
4.0
900
MHz
pF
-
2.0
2.0
dB
dB
R5 (1-February 2010)
CMPT5086
CMPT5087
SURFACE MOUNT
PNP SILICON TRANSISTOR
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
3) Collector
MARKING CODES:
CMPT5086: C2P
CMPT5087: C2Q
R5 (1-February 2010)
w w w. c e n t r a l s e m i . c o m
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