Central CMPT7410 Surface mount pnp silicon transistor Datasheet

CMPT7410
SURFACE MOUNT
LOW VCE(SAT)
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT7410 type
is a PNP Low VCE(SAT) silicon transistor manufactured
by the epitaxial planar process and epoxy molded in an
SOT-23 surface mount package. This device is designed
for battery driven, handheld devices requiring high
current and Low VCE(SAT).
MARKING CODE: C741
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
TJ, Tstg
ΘJA
ELECTRICAL CHARACTERISTICS: (TA=25°C unless
SYMBOL
TEST CONDITIONS
ICBO
VCB=40V
IEBO
VEB=6.0V
BVCBO
IC=100μA
BVCEO
IC=10mA
BVEBO
IE=100μA
VCE(SAT)
IC=50mA, IB=5.0mA
VCE(SAT)
IC=100mA, IB=10mA
VCE(SAT)
IC=200mA, IB=20mA
VCE(SAT)
IC=500mA, IB=50mA
VCE(SAT)
IC=800mA, IB=80mA
VCE(SAT)
IC=1.0A, IB=100mA
VBE(SAT)
IC=800mA, IB=80mA
VBE(ON)
VCE=1.0V, IC=10mA
hFE
VCE=1.0V, IC=10mA
hFE
VCE=1.0V, IC=100mA
hFE
VCE=1.0V, IC=500mA
hFE
VCE=1.0V, IC=1.0A
fT
VCE=10V, IC=50mA, f=100MHz
Cob
VCB=10V, IE=0, f=1.0MHz
UNITS
V
V
V
A
A
mW
°C
°C/W
40
25
6.0
1.0
1.5
350
-65 to +150
357
otherwise noted)
MIN
TYP
MAX
100
100
40
25
6.0
30
50
95
205
320
400
100
100
100
50
100
50
75
150
250
400
450
1.1
0.9
UNITS
nA
nA
V
V
V
mV
mV
mV
mV
mV
mV
V
V
300
10
15
MHz
pF
R2 (1-August 2011)
CMPT7410
SURFACE MOUNT
LOW VCE(SAT)
PNP SILICON TRANSISTOR
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
3) Collector
MARKING CODE: C741
R2 (1-August 2011)
w w w. c e n t r a l s e m i . c o m
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