CHAMP CMS-S087-040 Schottky barrier diode Datasheet

CMS-S087-040
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts
* Guard ring protection
* Low reverse leakage current
Chip size(A):
2.210* 2.210 mm
2
Bond Pad
size(B) :
2.083 *2.083 mm
2
Thickness :
300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
Metalization :
Cathode Ti/Ni/Ag
A
B
Electrical Characteristics
Sym.
Spec. Limit
Unit
Maximum Instantaneous Forward Volt
°
at IF : 8.0Amp. 25 C
VF max
0.54
Volt
Minimum Instantaneous Reverse Voltage
°
at IR : 300 uA 25 C
VR min.
43
Volt.
Minimum Non-repetitive Peak Surge current at 25 C
IFSM
150
Amp
Storage Temperature
TSTG
-65 to +125
°
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2002/04/24 Rev. 1
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