CMT04N60 POWER MOSFET GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to ! Higher Current Rating withstand high energy in the avalanche mode and switch ! Lower Rds(on) efficiently. This new high energy device also offers a ! Lower Capacitances drain-to-source diode with fast recovery time. Designed for ! Lower Total Gate Charge high voltage, high speed switching applications such as ! Tighter VSD Specifications power supplies, converters, power motor controls and ! Avalanche Energy Specified bridge circuits. PIN CONFIGURATION SYMBOL TO-220/TO-220FP D SOU RCE DRAIN G ATE Top View G S 1 2 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Current － Continuous － Pulsed Gate-to-Source Voltage － Continue － Non-repetitive Total Power Dissipation Symbol Value Unit ID 4.0 A IDM 14 VGS ±20 VGSM ±40 PD 96 TO-220FP 38 Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃ V W TO-220 Operating and Storage Temperature Range V TJ, TSTG -55 to 150 ℃ EAS 80 mJ θJC 1.30 ℃/W θJA 100 TL 260 (VDD = 100V, VGS = 10V, IL = 4A, L = 10mH, RG = 25Ω) Thermal Resistance － Junction to Case － Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds 2003/06/25 Preliminary Rev. 1.1 Champion Microelectronic Corporation ℃ Page 1 CMT04N60 POWER MOSFET ORDERING INFORMATION Part Number Package CMT04N60N220 TO-220 CMT04N60N220FP TO-220 Full Package ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. CMT04N60 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 μA) Symbol Min V(BR)DSS 600 Typ Max Units V Drain-Source Leakage Current (VDS =600 V, VGS = 0 V) IDSS Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) IGSSR 100 nA Gate Threshold Voltage (VDS = VGS, ID = 250 μA) VGS(th) 4.0 V Static Drain-Source On-Resistance (VGS = 10 V, ID = 2.0A) * RDS(on) Forward Transconductance (VDS = 50 V, ID = 2.0 A) * Input Capacitance Reverse Transfer Capacitance Rise Time Turn-Off Delay Time Fall Time Total Gate Charge gFS (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Output Capacitance Turn-On Delay Time mA 0.1 (VDD = 300 V, ID = 4.0 A, VGS = 10 V, RG = 9.1Ω) * 2.0 2.4 2.5 Ω mhos Ciss 540 760 Coss 125 180 pF pF Crss 8.0 20 pF td(on) 12 20 tr 7.0 10 ns ns td(off) 19 40 ns tf 10 20 ns 10 Qg 5.0 Qgs 2.7 nC nC Qgd 2.0 nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 4.5 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 7.5 nH Gate-Source Charge Gate-Drain Charge (VDS = 480 V, ID = 4.0 A, VGS = 10 V)* SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time (IS = 4.0 A, dIS/dt = 100A/µs) VSD 1.5 V ton ** ns trr 655 ns * Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2% ** Negligible, Dominated by circuit inductance 2003/06/25 Preliminary Rev. 1.1 Champion Microelectronic Corporation Page 2 CMT04N60 POWER MOSFET TYPICAL CHARACTERISTICS 2003/06/25 Preliminary Rev. 1.1 Champion Microelectronic Corporation Page 3 CMT04N60 POWER MOSFET 2003/06/25 Preliminary Rev. 1.1 Champion Microelectronic Corporation Page 4 CMT04N60 POWER MOSFET TO-220 TO-220FP 2003/06/25 Preliminary Rev. 1.1 Champion Microelectronic Corporation Page 5 CMT04N60 POWER MOSFET PACKAGE DIMENSION TO-220 A D c1 PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE E1 E F φ A A1 L1 b b1 c c1 D L E E1 e e1 F L b1 A1 c e b e1 L1 φ Side View Front View TO-220FP C I 0 R1 .5 0 0.1 8± 1 . R3 B J H Q D R1 .5 0 A A B C D E E H I O P K G J K 0 .6 R1 M N O P G Q b R b b1 b2 e N M b2 b1 e Front View 2003/06/25 Preliminary Rev. 1.1 R Side View Back View Champion Microelectronic Corporation Page 6 CMT04N60 POWER MOSFET IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. understood to be fully at the risk of the customer. Use of CMC products in such applications is In order to minimize risks associated with the customer’s applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan 2003/06/25 Preliminary Rev. 1.1 T E L : +886-2-8692 1591 F A X : +886-2-8692 1596 Champion Microelectronic Corporation Page 7