CMXD2004S CMXD2004SR SURFACE MOUNT DUAL PAIR, IN-SERIES HIGH VOLTAGE SILICON SWITCHING DIODES SOT-26 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD2004S and CMXD2004SR consists of dual, in-series pairs of high voltage silicon switching diodes, manufactured in a SUPERmini™ SOT-26 surface mount package, and designed for high voltage switching applications. This device can be configured as a 1200V switching diode, or as a bridge rectifier. See optional mounting pad configurations on following page. MARKING CODES: CMXD2004S: CX04S CMXD2004SR: C04SR MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage SYMBOL VR 240 V Peak Repetitive Reverse Voltage VRRM IO 300 V 200 mA IF 225 mA IFRM IFSM 625 mA 4.0 A Average Forward Current Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance IFSM PD TJ, Tstg ΘJA UNITS 1.0 A 350 mW -65 to +150 °C 357 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IR VR=240V IR BVR VR=240V, TA=150°C IR=100μA VF UNIT 100 nA 100 μA IF=100mA 1.0 V CJ VR=0, f=1.0MHz 5.0 pF trr IF=IR=30mA, Irr=3.0mA, RL=100Ω 50 ns 300 V R4 (25-May 2012) CMXD2004S CMXD2004SR SURFACE MOUNT DUAL PAIR, IN-SERIES HIGH VOLTAGE SILICON SWITCHING DIODES SOT-26 CASE - MECHANICAL OUTLINE PIN CONFIGURATION PIN CONFIGURATION LEAD CODE: 1) Anode D1 2) Cathode D1, Anode D3 3) Cathode D3 4) Anode D4 5) Cathode D4, Anode D2 6) Cathode D2 LEAD CODE: 1) Anode D1 2) Cathode D1, Anode D3 3) Cathode D3 4) Cathode D4 5) Anode D4, Cathode D2 6) Anode D2 CMXD2004S MARKING CODE: CX04S CMXD2004SR MARKING CODE: C04SR OPTIONAL MOUNTING PADS (Dimensions in mm) For Bridge Configuration CMXD2004S For 1200V Series Configuration CMXD2004S For 1200V Series Configuration CMXD2004SR R4 (25-May 2012) w w w. c e n t r a l s e m i . c o m