Central CMXT2222A Surface mount dual npn silicon transistor Datasheet

CMXT2222A
SURFACE MOUNT
DUAL NPN
SILICON TRANSISTORS
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMXT2222A
type is a dual NPN silicon transistor manufactured
by the epitaxial planar process, epoxy molded in a
SUPERmini™ surface mount package, and designed
for small signal general purpose and switching
applications.
MARKING CODE: X1P
SOT-26 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
ICBO
ICBO
ICEV
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
hFE
fT
Cob
Cib
hie
hie
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
ΘJA
UNITS
V
V
V
mA
mW
°C
°C/W
75
40
6.0
600
350
-65 to +150
357
CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
MAX
VCB=60V
10
VCB=60V, TA=125°C
10
VCE=60V, VEB=3.0V
10
VEB=3.0V
10
IC=10μA
75
IC=10mA
40
IE=10μA
6.0
IC=150mA, IB=15mA
0.3
IC=500mA, IB=50mA
1.0
IC=150mA, IB=15mA
0.6
1.2
IC=500mA, IB=50mA
2.0
VCE=10V, IC=0.1mA
35
VCE=10V, IC=1.0mA
50
VCE=10V, IC=10mA
75
VCE=10V, IC=150mA
100
300
VCE=1.0V, IC=150mA
50
VCE=10V, IC=500mA
40
VCE=20V, IC=20mA, f=100MHz
300
VCB=10V, IE=0, f=1.0MHz
8.0
VEB=0.5V, IC=0, f=1.0MHz
25
VCE=10V, IC=1.0mA, f=1.0kHz
2.0
8.0
VCE=10V, IC=10mA, f=1.0kHz
0.25
1.25
UNITS
nA
μA
nA
nA
V
V
V
V
V
V
V
MHz
pF
pF
kΩ
kΩ
R3 (12-February 2010)
CMXT2222A
SURFACE MOUNT
DUAL NPN
SILICON TRANSISTORS
ELECTRICAL
SYMBOL
hre
hre
hfe
hfe
hoe
hoe
rb’Cc
NF
td
tr
ts
tf
CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
MAX
UNITS
VCE=10V, IC=1.0mA, f=1.0kHz
8.0
x10-4
VCE=10V, IC=10mA, f=1.0kHz
4.0
x10-4
VCE=10V, IC=1.0mA, f=1.0kHz
50
300
VCE=10V, IC=10mA, f=1.0kHz
75
375
VCE=10V, IC=1.0mA, f=1.0kHz
5.0
35
μS
VCE=10V, IC=10mA, f=1.0kHz
25
200
μS
VCB=10V, IE=20mA, f=31.8MHz
150
ps
VCE=10V, IC=100μA, RS=1.0kΩ, f=1.0kHz
4.0
dB
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
10
ns
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
25
ns
VCC=30V, IC=150mA, IB1=IB2=15mA
225
ns
VCC=30V, IC=150mA, IB1=IB2=15mA
60
ns
SOT-26 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter Q1
2) Base Q1
3) Collector Q2
4) Emitter Q2
5) Base Q2
6) Collector Q1
MARKING CODE: X1P
R3 (12-February 2010)
w w w. c e n t r a l s e m i . c o m
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