Panasonic CNA1012K Photo lnterrupter for contactless sw, object detection Datasheet

Transmissive Photosensors (Photo lnterrupters)
CNA1012K (ON1114)
Photo lnterrupter
Unit: mm
For contactless SW, object detection
■ Overview
0.45±0.1
CNA1012K is a photocoupler in which a high efficiency GaAs
infrared light emitting diode is used as the light emitting element, and
a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and
objects passing between them are detected.
A'
Symbol
Rating
Reverse voltage
VR
3
V
emitting diode) Forward current
IF
50
mA
Power dissipation *1
PD
75
mW
VCEO
30
V
Emitter-collector voltage
(Base open)
VECO
5
V
Temperature
Collector current
IC
20
mA
Collector power dissipation *2
PC
100
mW
Operating ambient temperature
Topr
−25 to +85
°C
Storage temperature
Tstg
−30 to +100
°C
6.0 min.
2.0±0.2
(2.54)
SEC. A-A'
3
6.2±0.2
Unit
Output (Photo Collector-emitter voltage
transistor)
(Base open)
2-0.45±0.2
(10.0)
2
Device
center
1: Anode
2: Cathode
4
1
3: Collector
4: Emitter
PISTR104-013 Package
(Note) ( ) Dimension is reference
■ Absolute Maximum Ratings Ta = 25°C
Parameter
0.45±0.1
2-R0.5
• Highly precise position detection: 0.3 mm
• Wide gap between emitting and detecting elements, suitable for
thick plate detection
• Fast response: tr , tf = 6 µs (typ.)
• Small output current variation against change in temperature
• Large output current
Input (Light
5.0±0.2
A
2.2±0.2
■ Features
13.0±0.3
2.5±0.2
10.0±0.2
Mark for indicating
LED side
Note) *1: Input power derating ratio is 1.0 mW/°C at
Ta ≥ 25°C.
*2: Output power derating ratio is 1.34 mW/°C
at Ta ≥ 25°C.
■ Electrical-Optical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Typ
Max
1.2
1.5
V
VR = 3 V
10
µA
VCE = 10 V
200
nA
Forward voltage
VF
IF = 50 mA
characteristics Reverse current
IR
Input
Output
Collector-emitter cutoff current
characteristics (Base open)
Transfer
ICEO
Collector-emitter capacitance
CC
VCE = 10 V, f = 1 MHz
Collector current
IC
VCE = 10 V, IF = 20 mA
characteristics Collector-emitter saturation voltage VCE(sat)
Min
5
Unit
pF
0.7
mA
IF = 50 mA, IC = 0.1 mA
0.3
V
Rise time *
tr
VCC = 10 V, IC = 1 mA
6
µs
Fall time *
tf
RL = 100 Ω
6
µs
Note) 1. Input and output are practiced by electricity.
2. This device is designed be disregarded radiation.
3. *: Switching time measurement circuit
Sig. in
VCC
(Input pulse)
Sig. out
50Ω
RL
90%
10%
(Output pulse)
tr
tr : Rise time
tf : Fall time
tf
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHG00019BED
1
CNA1012K
IF , I C  T a
IF  V F
60
50
IC
20
10
Collector current IC (mA)
30
40
30
20
40
60
80
0
100
0
0.4
0.8
1.6
IF = 50 mA
10 mA
0.8
0.4
0
40
2.0
10 mA
1
10 −1
80
40
0
40
∆IC  d
100
VCC = 10 V
Ta = 25°C
1
10 −2
Rise time tr (µs)
102
10 V
RL = 1 kΩ
500 Ω
10
100 Ω
1
10 −3
80
Ambient temperature Ta (°C )
10 −1
10 −2
10 −1
80
Ambient temperature Ta (°C )
tr  I C
103
40
120
0
−40
102
10
VCE = 10 V
IF = 20 mA
Collector-emitter voltage VCE (V)
ICEO  Ta
103
∆IC  Ta
20 mA
1
102
10
160
IF = 30 mA
10 −2
10 −1
80
10
0
1
Forward current IF (mA)
Ta = 25°C
10
Ambient temperature Ta (°C )
VCE = 24 V
10 −2
2.4
IC  VCE
Collector current IC (mA)
Forward voltage VF (V)
1.2
102
1.2
10 −4
−40
10 −1
Forward voltage VF (V)
VF  T a
10 −1
1
Relative collector current ∆IC (%)
20
Relative collector current ∆IC (%)
0
1.6
0
−40
10
10
Ambient temperature Ta (°C )
Collector-emitter cutoff current (Base open) ICEO (µA)
VCE = 10 V
Ta = 25°C
50
40
0
−25
2
10
Ta = 25°C
IF
Forward current IF (mA)
Forward current IF , collector current IC (mA)
60
IC  I F
2
1
Collector current IC (mA)
SHG00019BED
10
VCE = 10 V
Ta = 25°C
IF = 20 mA
80
Criterion
0
d
60
40
20
0
0
1
2
3
4
Distance d (mm)
5
6
Caution for Safety
■ This product contains Gallium Arsenide (GaAs).
DANGER
GaAs powder and vapor are hazardous to human health if inhaled or
ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the product. Follow related laws and ordinances for disposal.
The product should be excluded form general industrial waste or
household garbage.
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
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